LSB20N65
Description
Lon FETTM Power MOSFET is fabricated using advanced super junction technology. The resulting device has extremely low on resistance, making it especially suitable for applications which require superior power density and outstanding efficiency.
Product Summary
VDS @ Tj,max
700V
RDS(on),max
0.15Ω
60A
Qg,typ
65n C
Features
- Ultra low RDS(on)
- Ultra low gate charge (typ. Qg = 65n C)
- 100% UIS tested
- Ro HS pliant
N-Channel MOSFET
Pb
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Continuous drain current Pulsed drain current 1)
( TC = 25°C ) ( TC = 100°C )
Gate-Source voltage
Avalanche energy, single pulse 2)
Avalanche energy, repetitive 1) Avalanche current, repetitive 1)
Power Dissipation ( TC = 25°C )
- Derate above 25°C
Operating and Storage Temperature Range
Continuous diode forward current
Diode pulse current
Symbol VDSS ID
IDM VGSS EAS EAR IAR PD
TJ, TSTG IS IS,pulse
LSB20N65 650 20 13 60 ±30 700 20.5 20 205 1.64
-55 to...
