LSC04N65 - N-channel MOSFET

General Description

LonFETTM Power MOSFET is fabricated using advanced super junction technology.

The resulting device has extremely low on resistance, making it especially suitable for applications which require superior power density and outstanding efficiency.

Key Features

Ultra low RDS(on).
Ultra low gate charge (typ. Qg = 13nC).
100% UIS tested.
RoHS compliant TO-251 TO-252 TO-220 D TO-220F.

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LSC04N65 n-channel mosfet by Lonten - Datasheet Preview

Datasheet Details

Part number	LSC04N65
Manufacturer	Lonten
File Size	853.30 KB
Description	N-channel MOSFET
Datasheet	LSC04N65 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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LSC04N65/LSD04N65/LSG04N65/LSH04N65 LonFET Lonten N-channel 650V, 4A, 0.96Ω LonFETTM Power MOSFET Description LonFETTM Power MOSFET is fabricated using advanced super junction technology. The resulting device has extremely low on resistance, making it especially suitable for applications which require superior power density and outstanding efficiency. Product Summary VDS @ Tj,max 700V RDS(on),max 0.96Ω IDM 12A Qg,typ 13nC Features  Ultra low RDS(on)  Ultra low gate charge (typ. Qg = 13nC)  100% UIS tested  RoHS compliant TO-251 TO-252 TO-220 D TO-220F Applications  Power faction correction (PFC).  Switched mode power supplies (SMPS).  Uninterruptible power supply (UPS).