LSD11N65 mosfet equivalent, n-channel mosfet.
* Ultra low RDS(on)
* Ultra low gate charge (typ. Qg = 28nC)
* 100% UIS tested
* RoHS compliant
D G
S
N-Channel MOSFET
Pb
Absolute Maximum Ratings
P.
which require superior power density and outstanding efficiency.
Product Summary
VDS @ Tj,max
700V
RDS(on),max
0.35.
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