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LSD11N70 - N-channel MOSFET

Datasheet Summary

Description

LonFETTM Power MOSFET is fabricated using advanced super junction technology.

The resulting device has extremely low on resistance, making it especially suitable for applications which require superior power density and outstanding efficiency.

Features

  • Ultra low RDS(on).
  • Ultra low gate charge (typ. Qg = 29nC).
  • 100% UIS tested.
  • RoHS compliant D G S N-Channel MOSFET Pb Absolute Maximum Ratings Parameter Drain-Source Voltage Continuous drain current Pulsed drain current 1) ( TC = 25°C ) ( TC = 100°C ) Gate-Source voltage Avalanche energy, single pulse 2) Avalanche energy, repetitive 1) Avalanche current, repetitive 1) Power Dissipation ( TC = 25°C ) - Derate above 25°C Operating and Storage Temperature Range Con.

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Datasheet Details

Part number LSD11N70
Manufacturer Lonten
File Size 479.77 KB
Description N-channel MOSFET
Datasheet download datasheet LSD11N70 Datasheet
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Full PDF Text Transcription

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LSD11N70 LonFET Lonten N-channel 700V, 11A, 0.37Ω LonFETTM Power MOSFET Description LonFETTM Power MOSFET is fabricated using advanced super junction technology. The resulting device has extremely low on resistance, making it especially suitable for applications which require superior power density and outstanding efficiency. Product Summary VDS @ Tj,max 750V RDS(on),max 0.37Ω IDM 30A Qg,typ 29nC Features  Ultra low RDS(on)  Ultra low gate charge (typ.
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