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LSH07N70 Datasheet Preview

LSH07N70 Datasheet

N-channel MOSFET

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LSC07N70/LSD07N70/LSG07N70/LSH07N70
LonFET
Lonten N-channel 700V, 7A, 0.57Ω LonFETTM Power MOSFET
Description
LonFETTM Power MOSFET is fabricated using
advanced super junction technology. The resulting
device has extremely low on resistance, making it
especially suitable for applications which require
superior power density and outstanding efficiency.
Product Summary
VDS @ Tj,max
750V
RDS(on),max
0.57Ω
IDM
21A
Qg,typ
19nC
Features
Ultra low Rdson
Ultra low gate charge (typ. Qg = 19nC)
100% UIS tested
RoHS compliant
Applications
Power faction correction (PFC).
Switched mode power supplies (SMPS).
Uninterruptible power supply (UPS).
TO-251 TO-252 TO-220 TO-220F
D
G
S
N-Channel MOSFET
Pb
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Continuous drain current
Pulsed drain current 1)
( TC = 25°C )
( TC = 100°C )
Gate-Source voltage
Avalanche energy, single pulse 2)
Avalanche energy, repetitive 1)
Avalanche current, repetitive 1)
Power Dissipation ( TC = 25°C )
- Derate above 25°C
Operating and Storage Temperature Range
Continuous diode forward current
Diode pulse current
Symbol
VDSS
ID
IDM
VGSS
EAS
EAR
IAR
PD
TJ, TSTG
IS
IS,pulse
Value
700
7
4.4
21
±30
230
0.5
7
83
0.67
-55 to +150
7
21
Unit
V
A
A
A
V
mJ
mJ
A
W
W/°C
°C
A
A
Version 1.1 2014
1
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Lonten

LSH07N70 Datasheet Preview

LSH07N70 Datasheet

N-channel MOSFET

No Preview Available !

LSC07N70/LSD07N70/LSG07N70/LSH07N70
LonFET
Thermal Characteristics TO-251/TO-252/TO-220
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-Case
RθJC
2.5
°C/W
Thermal Resistance, Junction-to-Ambient
RθJA
Thermal Characteristics TO-220F
62
°C/W
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-Case
RθJC
4.3
°C/W
Thermal Resistance, Junction-to-Ambient
RθJA
Package Marking and Ordering Information
80
°C/W
Device
Device Package
Marking
LSC07N70
TO-220
LSC07N70
LSD07N70
TO-220F
LSD07N70
LSG07N70
TO-252
LSG07N70
LSH07N70
TO-251
LSH07N70
Electrical Characteristics Tc = 25°C unless otherwise noted
Parameter
Symbol
Test Condition
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Drain cut-off current
BVDSS
VGS(th)
IDSS
Gate leakage current, Forward
IGSSF
VGS=0 V, ID=0.25 mA
VDS=VGS, ID=0.25mA
VDS=700 V, VGS=0 V,
Tj = 25°C
Tj = 125°C
VGS=30 V, VDS=0 V
Gate leakage current, Reverse
Drain-source on-state resistance
IGSSR
RDS(on)
Gate resistance
RG
Dynamic characteristics
VGS=-30 V, VDS=0 V
VGS=10 V, ID=3.5 A
Tj = 25°C
Tj = 150°C
f=1 MHz, open drain
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Ciss
Coss
Crss
td(on)
tr
VDS = 25 V, VGS = 0 V,
f = 1 MHz
VDD = 300V, ID = 3.5A
RG = 12Ω, VGS=10V
Turn-off delay time
td(off)
Fall time
tf
Gate charge characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Qgs
Qgd
Qg
Vplateau
VDD=480 V, ID=3.5A,
VGS=0 to 10 V
Version 1.1 2014
2
Min.
Typ.
Max.
Unit
700
-
-
V
2.5
3.5
4.5
V
μA
-
-
1
-
10
-
-
-
100
nA
-
-
-100
nA
-
-
0.51
0.57
Ω
-
1.2
-
-
0.4
-
Ω
-
710
-
-
470
-
pF
-
6
-
-
16
-
-
13
-
ns
-
35
-
-
7
-
-
4
-
-
9
-
nC
-
19
-
-
5.8
-
V
www.lonten.cc


Part Number LSH07N70
Description N-channel MOSFET
Maker Lonten
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