LPM2302 transistor equivalent, n-channel enhancement mode field effect transistor.
* 20V/3.5A, RDS(ON)=50mΩ(Typ.)@VGS=4.5V
* 20V/3.0A, RDS(ON)=75mΩ(Typ.)@VGS=2.5V
* Super high density cell design for extremely low RDS(ON)
* SOT23 Package.
notebook computer power management and other battery powered circuits where high-side switching are needed.
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