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1N3600 - Silicon Switching Diode

Download the 1N3600 datasheet PDF. This datasheet also covers the 1N3600-MA variant, as both devices belong to the same silicon switching diode family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/231.
  • Metallurgically Bonded.
  • Hermetically Sealed.
  • Double Plug Construction Maximum Ratings Operating & Storage Temperature: -65°C to +175°C Operating Current: 300 mA @ TA = +25°C Derating: 2 mA DC/°C above TL = +75°C @ L = 3/8” Surge Current A: 2 A (pk) tP = 8.3 ms, VRM = 0 Surge Current B: 4 A (pk) tP = 1 µs, VRM = 0 Rev. V1 Electrical Specifications @ +25°C (unless otherwise Specified) TYPE # VBR IR = 10 μA VRWM 1.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (1N3600-MA-COM.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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1N3600UR SWITCHING DIODE Compensated Deuices Incorporated
1N3600UR SWITCHING DIODE Microsemi Corporation

Other Datasheets by MACOM Technology Solutions

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
1N3600, 1N4150 & 1N4150-1 Silicon Switching Diode Features  Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/231  Metallurgically Bonded  Hermetically Sealed  Double Plug Construction Maximum Ratings Operating & Storage Temperature: -65°C to +175°C Operating Current: 300 mA @ TA = +25°C Derating: 2 mA DC/°C above TL = +75°C @ L = 3/8” Surge Current A: 2 A (pk) tP = 8.3 ms, VRM = 0 Surge Current B: 4 A (pk) tP = 1 µs, VRM = 0 Rev. V1 Electrical Specifications @ +25°C (unless otherwise Specified) TYPE # VBR IR = 10 μA VRWM 1N3600 1N4150, -1 V dc 75 75 V (pk) 50 50 IR1 VR = 50 Vdc TA = 25°C μA dc 0.1 0.1 IR2 VR = 50 Vdc TA =150°C μA dc 100 100 C Trr IR = 0; f = 1 MHz IF = IR = 10 to 100 mA dc ac signal = 50 mV (p-P) RL = 100 Ω pF ns 2.5 4.0 2.5 4.