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1N4150-1 Datasheet Preview

1N4150-1 Datasheet

Silicon Switching Diode

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1N3600, 1N4150 & 1N4150-1
Silicon Switching Diode
Features
Available in JAN, JANTX, and JANTXV per
MIL-PRF-19500/231
Metallurgically Bonded
Hermetically Sealed
Double Plug Construction
Maximum Ratings
Operating & Storage Temperature: -65°C to +175°C
Operating Current: 300 mA @ TA = +25°C
Derating: 2 mA DC/°C above TL = +75°C @ L = 3/8”
Surge Current A: 2 A (pk) tP = 8.3 ms, VRM = 0
Surge Current B: 4 A (pk) tP = 1 µs, VRM = 0
Rev. V1
Electrical Specifications @ +25°C (unless otherwise Specified)
TYPE #
VBR
IR = 10 μA
VRWM
1N3600
1N4150, -1
V dc
75
75
V (pk)
50
50
IR1
VR = 50 Vdc
TA = 25°C
μA dc
0.1
0.1
IR2
VR = 50 Vdc
TA =150°C
μA dc
100
100
C Trr
IR = 0; f = 1 MHz
IF = IR = 10 to 100 mA dc
ac signal = 50 mV (p-P)
RL = 100 Ω
pF ns
2.5 4.0
2.5 4.0
Forward Voltage Limits - All Types
Limits
minimum
maximum
VF1
IF = 1 mA dc
V dc
0.540
0.620
VF2
IF = 10 mA dc
V dc
0.660
0.740
VF3
IF = 50 mA dc
(Pulsed)
V dc
0.760
0.860
VF4
IF = 100 mA dc
(Pulsed)
V dc
0.820
0.920
VF5
IF = 200 mA dc
(Pulsed)
V dc
0.870
1.000
1
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support




MA-COM

1N4150-1 Datasheet Preview

1N4150-1 Datasheet

Silicon Switching Diode

No Preview Available !

1N3600, 1N4150 & 1N4150-1
Silicon Switching Diode
Outline
Rev. V1
Graphs
2
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support


Part Number 1N4150-1
Description Silicon Switching Diode
Maker MA-COM
PDF Download

1N4150-1 Datasheet PDF






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