MA4P506-255 Datasheet | MACOM Technology Solutions

Features - - - - - High Power PIN Diodes Fast Speed PIN Diodes Voltage Ratings to 1000 Volts Long Carrier Lifetime Designs High Reliability for Space/Military Applications M/A- Products Rev. V3 Absolute Maximum Ratings1 @ TA = +25 °C (unless otherwise specified) Parameter Voltage Operating Temperature Absolution Max. Voltage Rating - 65°C to +175°C -65°C to +200°C Pdiss = T (max Operating)-25C Thermal Resistance Description and Applications MA-'s product line of packaged PIN diodes represents a prehensive bination of PIN diode electrical characteristics and package outlines. This union of semiconductor and packaging technology gives considerable design flexibility to the PIN diode circuit designer. The fast switching speed PIN diodes utilize thin I-region silicon dioxide passivated chips that incorporate careful control of semiconductor processing. These diodes achieve consistent performance in control circuit applications. The packaged CERMACHIP PIN diodes employ MA's unique hard glass passivated, hermetically sealed PIN diode chip. The packaged CERMACHIP PIN diodes are designed for use in high power and high RF voltage applications. The PIN diode chips are bonded into hermetically sealed ceramic or glass packages that are designed for high volume, close tolerance utilization. Packages are available which are suitable for mounting in a variety of microwave and RF circuit media. The packaged silicon PIN diode series has high inherent reliability and is capable of meeting stringent environmental tests. These diodes may be ordered with testing to selected reliability levels. Storage Temperature Max Power Dissipation 1. Operation of this device above any one of these parameters may cause permanent damage. Dimension INCHES 0.077 0.054 0.083 0.063 1.96 1.37 2.11 1.6 Electrical Specifications TA= +25 C Part Number Minimum Reverse Voltage VR @-10μA (VDC) 100 200 500 500 500 1000 Maximum Junction Capacitance (p F) Cj @ VR 1 MHz (p F) 0.05 @10V 0.15 @ 10V...