Datasheet4U Logo Datasheet4U.com

MAAP-015016-DIE - Power Amplifier

Download the MAAP-015016-DIE datasheet PDF (MAAP-015016-DIE-MA included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for power amplifier.

Description

The MAAP-015016-DIE is a wideband power amplifier operating from 32 to 38 GHz, with a saturated output power of 37 dBm, 23% PAE and small signal gain of 18 dB.

The design is fully matched to 50 Ohms and includes on-chip ESD protection and integrated DC blocking caps on both I/O ports.

Features

  • Frequency Range: 32 to 38 GHz.
  • Small Signal Gain: 18 dB.
  • Saturated Power: 37 dBm.
  • Power Added Efficiency: 23%.
  • 100% On-Wafer RF and DC Testing.
  • 100% Visual Inspection to MIL-STD-883 Method 2010.
  • Bias VD = 6 V, ID = 2.5 A, VG = -0.9 V.
  • Dimensions: 3.09 x 5.67 x 0.05 mm.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MAAP-015016-DIE-MA-COM.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Other Datasheets by MA-COM

Full PDF Text Transcription

Click to expand full text
MAAP-015016-DIE Ka-Band 4 W Power Amplifier 32 - 38 GHz Features  Frequency Range: 32 to 38 GHz  Small Signal Gain: 18 dB  Saturated Power: 37 dBm  Power Added Efficiency: 23%  100% On-Wafer RF and DC Testing  100% Visual Inspection to MIL-STD-883 Method 2010  Bias VD = 6 V, ID = 2.5 A, VG = -0.9 V  Dimensions: 3.09 x 5.67 x 0.05 mm Description The MAAP-015016-DIE is a wideband power amplifier operating from 32 to 38 GHz, with a saturated output power of 37 dBm, 23% PAE and small signal gain of 18 dB. The design is fully matched to 50 Ohms and includes on-chip ESD protection and integrated DC blocking caps on both I/O ports. The device is manufactured in 0.15 µm GaAs pHEMT device technology with BCB wafer coating to enhance ruggedness and repeatability of performance.
Published: |