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MAAP-015030 - Power Amplifier

Download the MAAP-015030 datasheet PDF. This datasheet also covers the MAAP-015030-MA variant, as both devices belong to the same power amplifier family and are provided as variant models within a single manufacturer datasheet.

Description

The MAAP-015030 two stage 8.5 - 11.75 GHz GaAs MMIC power amplifier has a saturated pulsed output power of 41 dBm and a large signal gain of 21 dB.

The power amplifier can be biased using a direct gate voltage or using an on chip gate bias circuit.

Features

  • 12 W X-Band Power Amplifier.
  • 21 dB Large Signal Gain.
  • 41 dBm Saturated Pulsed Output Power.
  • 40% Power Added Efficiency.
  • On Chip Gate Bias Circuit.
  • 100% On-wafer DC & RF Power Tested.
  • 100% Visual Inspection to MIL-STD-833.
  • Bare Die.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MAAP-015030-MA-COM.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription

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MAAP-015030 Power Amplifier, 13 W 8.5 - 11.75 GHz Features  12 W X-Band Power Amplifier  21 dB Large Signal Gain  41 dBm Saturated Pulsed Output Power  40% Power Added Efficiency  On Chip Gate Bias Circuit  100% On-wafer DC & RF Power Tested  100% Visual Inspection to MIL-STD-833  Bare Die Description The MAAP-015030 two stage 8.5 - 11.75 GHz GaAs MMIC power amplifier has a saturated pulsed output power of 41 dBm and a large signal gain of 21 dB. The power amplifier can be biased using a direct gate voltage or using an on chip gate bias circuit. This device is well suited for communication and radar applications.
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