Download MAAP-015030 Datasheet PDF
MAAP-015030 page 2
Page 2
MAAP-015030 page 3
Page 3

MAAP-015030 Key Features

  • 12 W X-Band Power Amplifier
  • 21 dB Large Signal Gain
  • 41 dBm Saturated Pulsed Output Power
  • 40% Power Added Efficiency
  • On Chip Gate Bias Circuit
  • 100% On-wafer DC & RF Power Tested
  • 100% Visual Inspection to MIL-STD-833
  • Bare Die
  • 11.75 GHz GaAs MMIC power amplifier has a saturated pulsed output power of 41 dBm and a large signal gain of 21 dB. The

MAAP-015030 Description

The MAAP-015030 two stage 8.5 - 11.75 GHz GaAs MMIC power amplifier has a saturated pulsed output power of 41 dBm and a large signal gain of 21 dB. The power amplifier can be biased using a direct gate voltage or using an on chip gate bias circuit. This device is well suited for munication and radar applications.