MAAP-015035 Description
The MAAP-015035 is a three stage 8.5 - 11.5 GHz GaAs pHEMT MMIC power amplifier capable of achieving a saturated pulsed output power of 41 dBm and a small signal gain of 36 dB. The gate terminals of the power amplifier can be biased directly using a direct gate voltage or using an on chip gate bias circuit. The chip includes surface passivation for added protection and reliability This device is well suited for...
MAAP-015035 Key Features
- 12 W X-Band Power Amplifier
- 36 dB Small Signal Gain
- 41 dBm Saturated Pulsed Output Power
- 40% Power Added Efficiency
- On Chip Gate Bias Circuit
- 100% On-wafer DC & RF Power Tested
- 100% Visual Inspection to MIL-STD-833
- Bare Die
- 11.5 GHz GaAs pHEMT MMIC power amplifier capable of achieving a saturated pulsed output power of 41 dBm and a small sign