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MAAP-015035 - Power Amplifier

Download the MAAP-015035 datasheet PDF. This datasheet also covers the MAAP-015035-MA variant, as both devices belong to the same power amplifier family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (MAAP-015035-MA-COM.pdf) that lists specifications for multiple related part numbers.

General Description

The MAAP-015035 is a three stage 8.5 - 11.5 GHz GaAs pHEMT MMIC power amplifier capable of achieving a saturated pulsed output power of 41 dBm and a small signal gain of 36 dB.

The gate terminals of the power amplifier can be biased directly using a direct gate voltage or using an on chip gate bias circuit.

The chip includes surface passivation for added protection and reliability This device is well suited for communication and radar applications.

Overview

MAAP-015035 Power Amplifier, 12 W 8.5 - 11.5 GHz.

Key Features

  • 12 W X-Band Power Amplifier.
  • 36 dB Small Signal Gain.
  • 41 dBm Saturated Pulsed Output Power.
  • 40% Power Added Efficiency.
  • On Chip Gate Bias Circuit.
  • 100% On-wafer DC & RF Power Tested.
  • 100% Visual Inspection to MIL-STD-833.
  • Bare Die.

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