Download the MADS-001318-1197HP datasheet PDF.
This datasheet also covers the MADS-001317-1278HP-MA variant, as both devices belong to the same gaas flip chip schottky barrier diodes family and are provided as variant models within a single manufacturer datasheet.
General Description
The MA4E1317 single, MA4E1318 anti-parallel pair, MA4E1319-1 reverse tee, MA4E1319-2 series tee and MA4E2160 unconnected anti-parallel pair are gallium arsenide flip chip Schottky barrier diodes.
Key Features
Low Series Resistance.
Low Capacitance.
High Cutoff Frequency.
Silicon Nitride Passivation.
Polyimide Scratch Protection.
Designed for Easy Circuit Insertion
Rev. V11 MA4E1317.
Full PDF Text Transcription for MADS-001318-1197HP (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
MADS-001318-1197HP. For precise diagrams, and layout, please refer to the original PDF.
MA4Exxxx Series GaAs Flip Chip Schottky Barrier Diodes Features Low Series Resistance Low Capacitance High Cutoff Frequency Silicon Nitride Passivation Polyimid...
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tance High Cutoff Frequency Silicon Nitride Passivation Polyimide Scratch Protection Designed for Easy Circuit Insertion Rev. V11 MA4E1317 Description and Applications The MA4E1317 single, MA4E1318 anti-parallel pair, MA4E1319-1 reverse tee, MA4E1319-2 series tee and MA4E2160 unconnected anti-parallel pair are gallium arsenide flip chip Schottky barrier diodes. These devices are fabricated on OMCVD epitaxial wafers using a process designed for high device uniformity and extremely low parasitics. The diodes are fully passivated with silicon nitride and have an additional layer of polyimide for scratch protection.
MADS-001318-1197HP Datasheet
