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MAGX-000035-01000P - Pulsed Transistor

Download the MAGX-000035-01000P datasheet PDF (MAGX-000035-01000P-MA included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for pulsed transistor.

Description

The MAGX-000035-01000P is a GaN on SiC unmatched power device offering the widest RF frequency capability, most reliable high voltage operation, lowest overall power transistor size, cost and weight in a “TRUE SMT” plastic-packaging technology.

Features

  • GaN on SiC D-Mode Transistor Technology.
  • Unmatched, Ideal for Pulsed / CW.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MAGX-000035-01000P-MA-COM.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription

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MAGX-000035-01000P GaN Wideband 10 W CW / Pulsed Transistor in Plastic Package DC - 3.5 GHz Rev. V2 Features  GaN on SiC D-Mode Transistor Technology  Unmatched, Ideal for Pulsed / CW Applications  50 V Typical Bias, Class AB  Common-Source Configuration  Thermally-Enhanced 3 x 6 mm 14-Lead DFN  MTTF = 600 years (TJ < 200°C)  Halogen-Free “Green” Mold Compound  RoHS* Compliant and 260°C Reflow Compatible  MSL-1 Description The MAGX-000035-01000P is a GaN on SiC unmatched power device offering the widest RF frequency capability, most reliable high voltage operation, lowest overall power transistor size, cost and weight in a “TRUE SMT” plastic-packaging technology. Use of an internal stress buffer technology allows reliable operation at junction temperatures up to 200°C.
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