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MASW-002102-13580 - Silicon PIN Diode Switches

Download the MASW-002102-13580 datasheet PDF. This datasheet also covers the MASW-002102-13580-MA variant, as both devices belong to the same silicon pin diode switches family and are provided as variant models within a single manufacturer datasheet.

General Description

The MASW-002102-13580 and MASW-003102-13590 devices are SP2T and SP3T broad band switches with integrated bias networks utilizing M/A-COM Technology Solutions HMICTM (Heterolithic Microwave Integrated Circuit) process, US Patent 5,268,310.

Key Features

  •  Broad Bandwidth Specified up to 18 GHz.
  •  Usable up to 26 GHz.
  •  Integrated Bias Network.
  •  Low Insertion Loss / High Isolation.
  •  Rugged.
  •  Fully Monolithic.
  •  Glass Encapsulate Construction.
  •  RoHS Compliant.
  • and 260°C Reflow Compatible.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MASW-002102-13580-MA-COM.pdf) that lists specifications for multiple related part numbers.

More Datasheets from MACOM Technology Solutions

Part Number Description
MASW-002103-1363 Silicon SPDT Surface Mount HMIC PIN Diode Switch
MASW-003102-13590 Silicon PIN Diode Switches
MASW-004103-1365 Silicon SP4T Surface Mount HMIC PIN Diode Switch
MASW-004240-13170W SP4T Surface Mount Silicon PIN Diode Switch
MASW-005102-13600 Silicon PIN Diode Switch
MASW-006102-13610 Silicon PIN Diode Switch
MASW-007075 GaAs SPDT Absorptive Switch
MASW-007075-000100 GaAs SPDT Absorptive Switch
MASW-007075-0001TB GaAs SPDT Absorptive Switch
MASW-007075-0001TR GaAs SPDT Absorptive Switch

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MASW-002102-13580 MASW-003102-13590 HMIC™ Silicon PIN Diode Switches with Integrated Bias Network Rev. V5 Features  Broad Bandwidth Specified up to 18 GHz  Usable up to 26 GHz  Integrated Bias Network  Low Insertion Loss / High Isolation  Rugged  Fully Monolithic  Glass Encapsulate Construction  RoHS Compliant* and 260°C Reflow Compatible Description The MASW-002102-13580 and MASW-003102-13590 devices are SP2T and SP3T broad band switches with integrated bias networks utilizing M/A-COM Technology Solutions HMICTM (Heterolithic Microwave Integrated Circuit) process, US Patent 5,268,310. This process allows the incorporation of silicon pedestals that form series and shunt diodes or vias by imbedding them in low loss, low dispersion glass.