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MASW-011021 - Silicon PIN Diode SPDT Switch

Download the MASW-011021 datasheet PDF. This datasheet also covers the MASW-011021-MA variant, as both devices belong to the same silicon pin diode spdt switch family and are provided as variant models within a single manufacturer datasheet.

General Description

This device is a SURMOUNT™ X-Band monolithic SPDT switch designed for high power, high performance applications.

Key Features

  • Specified from 8 GHz to 12 GHz.
  • Low Insertion Loss.
  • High Isolation.
  • Low Parasitic Capacitance and Inductance.
  • Surface Mountable, Fully Monolithic Die.
  • Glass Encapsulated Construction.
  • 20 W Pulsed Power Handling5.
  • Silicon Nitride Passivation.
  • Polymer Scratch Protection.
  • RoHS.
  • Compliant Rev. V3.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MASW-011021-MA-COM.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by MACOM Technology Solutions

Part Number Description
MASW-011021-001SMB Silicon PIN Diode SPDT Switch
MASW-011021-14010G Silicon PIN Diode SPDT Switch
MASW-011032 Switch
MASW-011036 Ka-Band High Power Terminated SPDT PIN Switch
MASW-011041 SP3T 200W Switch

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MASW-011021 SURMOUNTTM Silicon PIN Diode SPDT Switch 6 - 14 GHz Features  Specified from 8 GHz to 12 GHz  Low Insertion Loss  High Isolation  Low Parasitic Capacitance and Inductance  Surface Mountable, Fully Monolithic Die  Glass Encapsulated Construction  20 W Pulsed Power Handling5  Silicon Nitride Passivation  Polymer Scratch Protection  RoHS* Compliant Rev. V3 Description This device is a SURMOUNT™ X-Band monolithic SPDT switch designed for high power, high performance applications. This Surface Mount chipscale configuration is designed with minimal parasitics usually associated with hybrid MIC designs incorporating beam lead and/or bondable PIN diodes that require chip and wire assembly.