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MMD830-C11 - Silicon Step Recovery Diodes

This page provides the datasheet information for the MMD830-C11, a member of the MMD805-C12-MA Silicon Step Recovery Diodes family.

Description

The diodes feature fully passivated, true mesa construction for sharp transitions and improved stability.

The beam lead SRDs have the industry’s fastest transition times for millimeter wave multiplication and picoseconds pulse forming.

Rev.

Features

  • Output Combs to 40+ GHz.
  • Transition Times down to 35 ps.
  • Screening per MIL-PRF-19500 and MIL-PRF- 38534 available.

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Datasheet Details

Part number MMD830-C11
Manufacturer MACOM
File Size 685.55 KB
Description Silicon Step Recovery Diodes
Datasheet download datasheet MMD830-C11 Datasheet
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Silicon Step Recovery Diodes Features • Output Combs to 40+ GHz • Transition Times down to 35 ps • Screening per MIL-PRF-19500 and MIL-PRF- 38534 available Description The diodes feature fully passivated, true mesa construction for sharp transitions and improved stability. The beam lead SRDs have the industry’s fastest transition times for millimeter wave multiplication and picoseconds pulse forming. MMDx & SMMDx Series Rev. V5 Plastic SMT w/leads Chip & Beam Lead Electrical Specifications: TA = 25°C Model Voltage Breakdown (VB) V Min. Junction Capacitance (CJ) pF Min. Max. Lifetime (t) ns Min. Typ. Transition Time (tt) ps Typ. Max. Frequency Cutoff (FCO) GHz Typ. Theta (θJC) °C/W Max. Chip MMD805-C12 60 2.5 3.5 80 100 250 300 130 15 MMD810-C12 50 1.5 2.
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