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MNP0010 - Silicon NIP Diode

Download the MNP0010 datasheet PDF (MNP0010-MA included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for silicon nip diode.

Description

The MNP0010 is a silicon NIP diode that

Features

  • Rugged Construction.
  • Fully Passivated.
  • Low Leakage.
  • Available in Both Chip and Package Styles.
  • Screening per MIL-PRF-19500 and MIL-PRF- 38534 Available.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MNP0010-MA-COM.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription

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MNP0010 Silicon NIP Diode Features  Rugged Construction  Fully Passivated  Low Leakage  Available in Both Chip and Package Styles  Screening per MIL-PRF-19500 and MIL-PRF- 38534 Available Description The MNP0010 is a silicon NIP diode that features a fully passivated mesa construction for low leakage and reliability. Rev. V2 Electrical Specifications: TC = +25°C Parameter Test Conditions Voltage Breakdown Junction Capacitance DIE Package (C12p) Total Capacitance Package Style: ET47p T54p T55p T89p Series Resistance IR = 10 µA VR = 10 V, 1 MHz VR = 10 V, 1 MHz IF = 10 mA, 500 MHz Lifetime IF = 10 mA, IR = 6 mA, 50% I Layer — Units V pF Min. 150 — Typ. — 0.08 Max. — 0.12 pF — 0.48 0.60 0.28 0.37 0.21 0.29 0.33 0.43 Ω — 2.0 2.
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