Datasheet Summary
MSS30-xxx-x Series
Low Barrier Silicon Schottky Diodes
Features
- VF, RD and CJ Matching Options
- Chip, Beam Lead and Packaged Devices
- Hi-Rel Screening per MIL-PRF-19500 and MIL-
PRF-38534 Available
Description
The MSS30-xxx-x Series of Schottky diodes are fabricated on N-Type epitaxial substrates using proprietary processes that yield the highest FCOs in the industry. Optimum mixer performance is obtained with LO power of -3 dBm to +3 dBm per diode.
Rev. V1
Chip
Electrical Specifications: TA = 25°C
Model
Configuration
MSS30-046-C15 Single Junction
VF Typ.
MSS30-050-C15 Single Junction 0.27
Test Conditions
IF = 1 mA
VBR Min.
CJ Typ. / Max. pF
0.10 / 0.12
2 0.15 /...