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MSS50-244-H30 - High Barrier Silicon Schottky Diodes

Download the MSS50-244-H30 datasheet PDF (MSS50-048-C15-MA included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for high barrier silicon schottky diodes.

Description

The MSS50-xxx-x Series of Schottky diodes are fabricated on N-Type epitaxial substrates using proprietary processes that yield the highest FCOs in the industry.

Optimum mixer performance is obtained with LO power of +2 dBm to +8 dBm per diode.

Rev.

Features

  • VF, RD and CJ Matching Options.
  • Chip, Beam Lead and Packaged Devices.
  • Hi-Rel Screening per MIL-PRF-19500 and MIL- PRF-38534 Available.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MSS50-048-C15-MA-COM.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription

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MSS50-xxx-x Series High Barrier Silicon Schottky Diodes Features  VF, RD and CJ Matching Options  Chip, Beam Lead and Packaged Devices  Hi-Rel Screening per MIL-PRF-19500 and MIL- PRF-38534 Available Description The MSS50-xxx-x Series of Schottky diodes are fabricated on N-Type epitaxial substrates using proprietary processes that yield the highest FCOs in the industry. Optimum mixer performance is obtained with LO power of +2 dBm to +8 dBm per diode. Rev. V1 Chip Electrical Specifications: TA = 25°C Model Configuration VF Typ. V MSS50-048-C15 Single Junction 0.5 VBR Min. V 4 CJ Typ. / Max. pF 0.12 / 0.15 MSS50-062-C16 Test Conditions Single Junction 0.5 IF = 1 mA 5 0.50 / 0.55 IR = 10 µA VR = 0 V F = 1 MHz RS Typ. Ω 7 RD Max. Ω 15 2 12 I = 5 mA FCO Typ.
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