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NPT1015B - GaN Wideband Transistor

Download the NPT1015B datasheet PDF. This datasheet also covers the NPT1015B-MA variant, as both devices belong to the same gan wideband transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

The NPT1015 GaN HEMT is a wideband transistor optimized for DC - 3.5 GHz operation.

This device supports CW, pulsed, and linear operation with output power levels to 45 W (46.5 dBm) in an industry standard metal-ceramic package with bolt down flange.

Key Features

  • GaN on Si HEMT D-Mode Transistor.
  • Suitable for linear and saturated.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (NPT1015B-MA-COM.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
NPT1015B GaN Wideband Transistor 28 V, 45 W DC - 3.5 GHz Features  GaN on Si HEMT D-Mode Transistor  Suitable for linear and saturated applications  Tunable from DC - 3.5 GHz  28 V Operation  12 dB Gain @ 2.5 GHz  54 % Drain Efficiency @ 2.5 GHz  100 % RF Tested  Standard metal ceramic package with bolt down flange  RoHS* Compliant Description The NPT1015 GaN HEMT is a wideband transistor optimized for DC - 3.5 GHz operation. This device supports CW, pulsed, and linear operation with output power levels to 45 W (46.5 dBm) in an industry standard metal-ceramic package with bolt down flange. The NPT1015 is ideally suited for defense communications, land mobile radio, avionics, wireless infrastructure, ISM applications and VHF/ UHF/L/S-band radar.