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NPT1015B Datasheet Preview

NPT1015B Datasheet

GaN Wideband Transistor

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NPT1015B
GaN Wideband Transistor 28 V, 45 W
DC - 3.5 GHz
Features
GaN on Si HEMT D-Mode Transistor
Suitable for linear and saturated applications
Tunable from DC - 3.5 GHz
28 V Operation
12 dB Gain @ 2.5 GHz
54 % Drain Efficiency @ 2.5 GHz
100 % RF Tested
Standard metal ceramic package with bolt down
flange
RoHS* Compliant
Description
The NPT1015 GaN HEMT is a wideband transistor
optimized for DC - 3.5 GHz operation. This device
supports CW, pulsed, and linear operation with
output power levels to 45 W (46.5 dBm) in an
industry standard metal-ceramic package with bolt
down flange.
The NPT1015 is ideally suited for defense
communications, land mobile radio, avionics,
wireless infrastructure, ISM applications and VHF/
UHF/L/S-band radar.
Built using the SIGANTIC® process - a proprietary
GaN-on-Silicon technology.
Ordering Information
Part Number
NPT1015B
NPT1015B-SMBPPR
Package
bulk quantity
sample
Functional Schematic
Rev. V2
RFIN / VG 1
3
Flange
2 RFOUT / VD
Pin Configuration
Pin No.
Pin Name
Function
1 RFIN / VG RF Input / Gate
2
RFOUT / VD
RF Output / Drain
3
Flange1
Ground / Source
1. The Flange must be connected to RF and DC ground. This
path must also provide a low thermal resistance heat path.
* Restrictions on Hazardous Substances, European Union Directive 2011/65/EU.
1
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support




MA-COM

NPT1015B Datasheet Preview

NPT1015B Datasheet

GaN Wideband Transistor

No Preview Available !

NPT1015B
GaN Wideband Transistor 28 V, 45 W
DC - 3.5 GHz
Rev. V2
RF Electrical Specifications: TC = 25C, VDS = 28 V, IDQ = 400 mA
Parameter
Test Conditions
Symbol Min. Typ. Max. Units
Small Signal Gain
CW, 2.5 GHz
GSS - 13.5 - dB
Saturated Output Power
CW, 2.5 GHz
PSAT - 47.3 - dBm
Drain Efficiency at Saturation
Power Gain
CW, 2.5 GHz
2.5 GHz, POUT = 45 W
SAT
GP
-
10.5
57
12
-%
- dB
Drain Efficiency
2.5 GHz, POUT = 45 W
47 54 - %
Ruggedness: Output Mismatch
All phase angles
VSWR = 15:1, No Device Damage
DC Electrical Characteristics: TC = 25C
Parameter
Test Conditions
Symbol Min.
Drain-Source Leakage Current
Gate-Source Leakage Current
VGS = -8 V, VDS = 100 V
VGS = -8 V, VDS = 0 V
IDLK
IGLK
-
-
Gate Threshold Voltage
Gate Quiescent Voltage
VDS = 28 V, ID = 16 mA
VDS = 28 V, ID = 400 mA
VT
VGSQ
-2.3
-2.1
On Resistance
Maximum Drain Current
VDS = 2 V, ID = 120 mA
RON
VDS = 7 V pulsed, pulse width 300 µs ID,MAX
-
-
Typ.
-
-
-1.5
-1.2
0.22
9.2
Max.
16
8
-0.7
-0.5
-
-
Units
mA
mA
V
V
A
2
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support


Part Number NPT1015B
Description GaN Wideband Transistor
Maker MA-COM
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