GaN Wideband Transistor 28 V, 45 W
DC - 3.5 GHz
GaN on Si HEMT D-Mode Transistor
Suitable for linear and saturated applications
Tunable from DC - 3.5 GHz
28 V Operation
12 dB Gain @ 2.5 GHz
54 % Drain Efficiency @ 2.5 GHz
100 % RF Tested
Standard metal ceramic package with bolt down
The NPT1015 GaN HEMT is a wideband transistor
optimized for DC - 3.5 GHz operation. This device
supports CW, pulsed, and linear operation with
output power levels to 45 W (46.5 dBm) in an
industry standard metal-ceramic package with bolt
The NPT1015 is ideally suited for defense
communications, land mobile radio, avionics,
wireless infrastructure, ISM applications and VHF/
Built using the SIGANTIC® process - a proprietary
RFIN / VG 1
2 RFOUT / VD
1 RFIN / VG RF Input / Gate
RFOUT / VD
RF Output / Drain
Ground / Source
1. The Flange must be connected to RF and DC ground. This
path must also provide a low thermal resistance heat path.
* Restrictions on Hazardous Substances, European Union Directive 2011/65/EU.
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