NPT1015B Overview
Description
The NPT1015 GaN HEMT is a wideband transistor optimized for DC - 3.5 GHz operation. This device supports CW, pulsed, and linear operation with output power levels to 45 W (46.5 dBm) in an industry standard metal-ceramic package with bolt down flange.
Key Features
- GaN on Si HEMT D-Mode Transistor
- Suitable for linear and saturated applications
- Tunable from DC
- 28 V Operation
- 12 dB Gain @ 2.5 GHz
