Download the NPT2022 datasheet PDF.
This datasheet also covers the NPT2022-MA variant, as both devices belong to the same hemt d-mode amplifier family and are provided as variant models within a single manufacturer datasheet.
General Description
The NPT2022 GaN on silicon HEMT D-Mode amplifier optimized for DC - 2 GHz operation.
This device supports CW, pulsed, and linear operation with output power levels to 100 W in an industry standard plastic package with bolt down flange.
Full PDF Text Transcription for NPT2022 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
NPT2022. For precise diagrams, and layout, please refer to the original PDF.
GaN on Silicon General Purpose Amplifier DC - 2 GHz, 48 V, 100 W Features • GaN on Si HEMT D-Mode Amplifier • Suitable for Linear & Saturated Applications • Tunable from ...
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plifier • Suitable for Linear & Saturated Applications • Tunable from DC - 2 GHz • 48 V Operation • 20 dB Gain @ 900 MHz • 60% Drain Efficiency @ 900 MHz • 100% RF Tested • TO-272 Package • RoHS* Compliant and 260°C Reflow Compatible Description The NPT2022 GaN on silicon HEMT D-Mode amplifier optimized for DC - 2 GHz operation. This device supports CW, pulsed, and linear operation with output power levels to 100 W in an industry standard plastic package with bolt down flange. The NPT2022 is ideally suited for defense communications, land mobile radio, avionics, wireless infrastructure, ISM applications and VHF/ UHF/L/S-ba
NPT2022 Datasheet
