Download PH2226-110M Datasheet PDF
PH2226-110M page 2
Page 2
PH2226-110M page 3
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PH2226-110M Key Features

  • NPN silicon microwave power transistors
  • mon base configuration
  • Broadband Class C operation
  • High efficiency inter-digitized geometry
  • Diffused emitter ballasting resistors
  • Gold metallization system
  • Internal input and output impedance matching
  • Hermetic metal/ceramic package
  • RoHS pliant

PH2226-110M Description

PH2226-110M Radar Pulsed Power Transistor 110W, 2.2-2.6GHz, 100µs Pulse, 10% Duty.