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PH2226-50M Datasheet Preview

PH2226-50M Datasheet

Radar Pulsed Power Transistor

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PH2226-50M
Radar Pulsed Power Transistor
50 W, 2.2 - 2.6 GHz, 100 µs Pulse, 10% Duty
Features
NPN silicon microwave power transistors
Common base configuration
Broadband Class C operation
High efficiency inter-digitized geometry
Diffused emitter ballasting resistors
Gold metallization system
Internal input and output impedance matching
Hermetic metal/ceramic package
RoHS compliant
Outline Drawing
Rev. V1
Absolute Maximum Ratings at 25°C
Parameter
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (Peak)
Power Dissipation @ +25°C
Storage Temperature
Junction Temperature
Symbol
VCES
VEBO
IC
PTOT
TSTG
TJ
Rating
63
3.0
6.0
159
-65 to +200
200
Units
V
V
A
W
°C
°C
Electrical Specifications: TC = 25 ± 5°C (Room Ambient )
Parameter
Test Conditions
Collector-Emitter Breakdown Voltage IC = 15mA
Collector-Emitter Leakage Current
Thermal Resistance
VCE = 36V
Vcc = 36V, Pin = 8W
Output Power
Vcc = 36V, Pin = 8W
Power Gain
Vcc = 36V, Pin = 8W
Collector Efficiency
Vcc = 36V, Pin = 8W
Pulse Droop
Input Return Loss
Load Mismatch Tolerance
Load Mismatch Stability
Vcc = 36V, Pin = 8W
Vcc = 36V, Pin = 8W
Vcc = 36V, Pin = 8W
Vcc = 36V, Pin = 8W
Frequency
F = 2.25, 2.55 GHz
F = 2.25, 2.55 GHz
F = 2.25, 2.55 GHz
F = 2.25, 2.55 GHz
F = 2.25, 2.55 GHz
F = 2.25, 2.55 GHz
F = 2.25, 2.55 GHz
F = 2.25, 2.55 GHz
Symbol
BVCES
ICES
RTH(JC)
POUT
GP
C
Droop
RL
VSWR-T
VSWR-S
Min
65
-
-
50
8.0
40
-
-
-
-
Max
-
3.0
1.1
-
-
-
1.0
-9
3:1
1.5:1
Units
V
mA
°C/W
W
dB
%
dB
dB
-
-
1
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support




MA-COM

PH2226-50M Datasheet Preview

PH2226-50M Datasheet

Radar Pulsed Power Transistor

No Preview Available !

PH2226-50M
Radar Pulsed Power Transistor
50 W, 2.2 - 2.6 GHz, 100 µs Pulse, 10% Duty
Rev. V1
Typical RF Performance
Freq.
(GHz)
Pin
(W)
Pout
(W)
Gain
(dB)
Ic
(A)
Eff RL Droop VSWR-S VSWR-T
(%)
(dB)
(dB)
(1.5:1)
(3:1)
2.25 8.00 58.3 8.62 2.90 55.9 16.2 0.01
S
P
2.55 8.00 57.8 8.58 2.99 53.6 17.0 0.05
S
P
Gain vs. Frequency
9.2
8.8
8.4
8.0
7.6
2.20
2.30 2.40 2.50
Freq (GHz)
2.60
Collector Efficiency vs. Frequency
60
55
50
45
40
2.20
2.30 2.40 2.50
Freq (GHz)
2.60
RF Test Fixture Impedance
F (GHz)
2.25
2.40
2.55
ZIF (Ω)
15.0 - j7.0
14.0 - j5.5
13.7 - j4.0
ZOF (Ω)
12.8 - j3.0
12.0 - j1.6
11.8 - j0.4
2
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support


Part Number PH2226-50M
Description Radar Pulsed Power Transistor
Maker MA-COM
Total Page 4 Pages
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