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PH2729-130M Datasheet Preview

PH2729-130M Datasheet

Radar Pulsed Power Transistor

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PH2729-130M
Radar Pulsed Power Transistor
130 W, 2.7-2.9 GHz, 100 µs Pulse, 10% Duty
Features
NPN silicon microwave power transistors
Common base configuration
Broadband Class C operation
High efficiency inter-digitized geometry
Diffused emitter ballasting resistors
Gold metallization system
Internal input and output impedance matching
Hermetic metal/ceramic package
RoHS compliant
Outline Drawing
Rev. V1
Absolute Maximum Ratings at 25°C
Parameter
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (Peak)
Power Dissipation @ +25°C
Storage Temperature
Junction Temperature
Symbol
VCES
VEBO
IC
PTOT
TSTG
TJ
Rating
63
3.0
12.5
575
-65 to +200
200
Units
V
V
A
W
°C
°C
Electrical Specifications: TC = 25 ± 5°C (Room Ambient )
Parameter
Test Conditions
Collector-Emitter Breakdown Voltage IC = 40mA
Collector-Emitter Leakage Current
Thermal Resistance
VCE = 36V
Vcc = 36V, Pout = 130W
Input Power
Vcc = 36V, Pout = 130W
Power Gain
Vcc = 36V, Pout = 130W
Collector Efficiency
Vcc = 36V, Pout = 130W
Input Return Loss
Pulse Droop
Load Mismatch Tolerance
Load Mismatch Stability
Vcc = 36V, Pout = 130W
Vcc = 36V, Pout = 130W
Vcc = 36V, Pout = 130W
Vcc = 36V, Pout = 130W
Frequency
F = 2.7, 2.8, 2.9 GHz
F = 2.7, 2.8, 2.9 GHz
F = 2.7, 2.8, 2.9 GHz
F = 2.7, 2.8, 2.9 GHz
F = 2.7, 2.8, 2.9 GHz
F = 2.7, 2.8, 2.9 GHz
F = 2.7, 2.8, 2.9 GHz
F = 2.7, 2.8, 2.9 GHz
Symbol
BVCES
ICES
RTH(JC)
PIN
GP
C
RL
Droop
VSWR-T
VSWR-S
Min
63
-
-
-
7.0
40
-
-
-
-
Max
-
7.5
0.3
23
-
-
-10
0.5
2:1
1.5:1
Units
V
mA
°C/W
W
dB
%
dB
dB
-
-
1
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support




MA-COM

PH2729-130M Datasheet Preview

PH2729-130M Datasheet

Radar Pulsed Power Transistor

No Preview Available !

PH2729-130M
Radar Pulsed Power Transistor
130 W, 2.7-2.9 GHz, 100 µs Pulse, 10% Duty
Rev. V1
Typical RF Performance
Freq. (GHz)
Pin
(W)
Pout
(W)
Gain
(dB)
Ic
(A)
Eff RL VSWR-S VSWR-T
(%)
(dB)
(1.5:1)
(2:1)
2.7 13.9 130 9.73 7.78 46.4 -11.4 S
P
2.8 15.0 130 9.38 8.07 44.8 -13.6 S
P
2.9 17.0 130 8.85 8.07 44.8 -13.8 S
P
Gain vs. Frequency
10.0
9.5
9.0
8.5
8.0
2.70
2.75 2.80 2.85
Freq (GHz)
2.90
Collector Efficiency vs. Frequency
50
45
40
35
30
2.70
2.75 2.80 2.85
Freq (GHz)
2.90
RF Test Fixture Impedance
F (GHz)
2.7
2.8
2.9
ZIF (Ω)
5.5 - j9.1
5.25 - j8.8
5.05 - j8.3
ZOF (Ω)
1.9 - j5.6
1.75 - j5.2
1.6 - j4.8
2
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support


Part Number PH2729-130M
Description Radar Pulsed Power Transistor
Maker MA-COM
Total Page 4 Pages
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