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PH2729-65M Datasheet Preview

PH2729-65M Datasheet

Radar Pulsed Power Transistor

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PH2729-65M
Radar Pulsed Power Transistor
65W, 2.7-2.9 GHz, 100µs Pulse, 10% Duty
Features
NPN silicon microwave power transistors
Common base configuration
Broadband Class C operation
High efficiency inter-digitized geometry
Diffused emitter ballasting resistors
Gold metallization system
Internal input and output impedance matching
Hermetic metal/ceramic package
RoHS compliant
Outline Drawing
Rev. V2
Absolute Maximum Ratings at 25°C
Parameter
Sym- Rating Units
bol
Collector-Emitter Volt-
age
Emitter-Base Voltage
Collector Current (Peak)
VCES
VEBO
IC
65
3.0
8.0
V
V
A
Power Dissipation @
+25°C
Storage Temperature
Junction Temperature
PTOT
TSTG
TJ
330
-65 to
+200
200
W
°C
°C
Electrical Specifications: TC = 25 ± 5°C (Room Ambient )
Parameter
Test Conditions
Collector-Emitter Breakdown Voltage IC = 50mA
Collector-Emitter Leakage Current VCE = 36V
Thermal Resistance
Vcc = 36V, Pout = 65W
Input Power
Vcc = 36V, Pout = 65W
Power Gain
Vcc = 36V, Pout = 65W
Collector Efficiency
Vcc = 36V, Pout = 65W
Input Return Loss
Vcc = 36V, Pout = 65W
Load Mismatch Tolerance
Vcc = 36V, Pout = 65W
Load Mismatch Stability
Vcc = 36V, Pout = 65W
Frequency
F = 2.7, 2.8, 2.9 GHz
F = 2.7, 2.8, 2.9 GHz
F = 2.7, 2.8, 2.9 GHz
F = 2.7, 2.8, 2.9 GHz
F = 2.7, 2.8, 2.9 GHz
F = 2.7, 2.8, 2.9 GHz
F = 2.7, 2.8, 2.9 GHz
Symbol
BVCES
ICES
RTH(JC)
PIN
GP
C
RL
VSWR-T
VSWR-S
Min
65
-
-
-
8.5
40
-
-
-
Max Units
-V
7.5 mA
0.45
9.0
°C/W
W
- dB
-%
-9 dB
2:1 -
1.5:1
-
1
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support




MA-COM

PH2729-65M Datasheet Preview

PH2729-65M Datasheet

Radar Pulsed Power Transistor

No Preview Available !

PH2729-65M
Radar Pulsed Power Transistor
65W, 2.7-2.9 GHz, 100µs Pulse, 10% Duty
Rev. V2
Typical RF Performance
Freq.
(GHz)
Pin
(W)
Pout
(W)
Gain (dB)
Ic
(A)
Eff RL VSWR-S VSWR-T
(%)
(dB)
(1.5:1)
(2:1)
2.7 6.7
65 9.88 4.20 43.1 -15.5
S
P
2.8 6.2
65
10.20
3.84
47.0 -17.9
S
P
2.9 6.6
65 9.93 3.83 47.1 -12.4
S
P
Gain vs. Frequency
10.5
10.0
9.5
9.0
8.5
2.70
2.75 2.80 2.85
Freq (GHz)
2.90
Collector Efficiency vs. Frequency
55
50
45
40
35
2.70
2.75 2.80 2.85
Freq (GHz)
2.90
RF Test Fixture Impedance
F (GHz)
2.7
2.8
2.9
ZIF (Ω)
7.8 - j8.3
7.3 - j6.7
7.2 - j5.0
ZOF (Ω)
9.3 - j8.9
9.0 - j8.4
8.6 - j8.0
2
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support


Part Number PH2729-65M
Description Radar Pulsed Power Transistor
Maker MA-COM
Total Page 4 Pages
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