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PH2729-65M - Radar Pulsed Power Transistor

Download the PH2729-65M datasheet PDF. This datasheet also covers the PH2729-65M-MA variant, as both devices belong to the same radar pulsed power transistor family and are provided as variant models within a single manufacturer datasheet.

Features

  • NPN silicon microwave power transistors.
  • Common base configuration.
  • Broadband Class C operation.
  • High efficiency inter-digitized geometry.
  • Diffused emitter ballasting resistors.
  • Gold metallization system.
  • Internal input and output impedance matching.
  • Hermetic metal/ceramic package.
  • RoHS compliant Outline Drawing Rev. V2 Absolute Maximum Ratings at 25°C Parameter Sym- Rating Units bol Collector-Emitter Voltage Emitter-Base Voltage Collector Curr.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (PH2729-65M-MA-COM.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
PH2729-65M Radar Pulsed Power Transistor/ 65W/ loops Pulse/ 10% Duty 2.7 - 2.9 GHz Tyco Electronics
PH2729-150M Radar Pulsed Power Transistor-150 Watts 2.7-2.9 GHz/ 100ms Pulse/ 10% Duty Tyco Electronics
PH2729-25M RADAR PULSED POWER TRANSISTOR 25 WATTS/ 2.70-2.90 GHz/ 100ms PULSE/ 10% DUTY Tyco Electronics
PH2729-8SM Radar Pulsed Power Transistor/ 8.5W/ loops Pulse/ 10% Duty 2.7 - 2.9 GHz Tyco Electronics
PH2729430M Radar Pulsed Power Transistor/ 13OW/ IOOps Pulse/ 10% Duty 2.7 - 2.9 GHz Tyco Electronics

Other Datasheets by MACOM Technology Solutions

Part Number Description
PH2729-110M Radar Pulsed Power Transistor
PH2729-130M Radar Pulsed Power Transistor
PH2729-25M Radar Pulsed Power Transistor
PH2731-20M Radar Pulsed Power Transistor
PH2731-5M Radar Pulsed Power Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PH2729-65M Radar Pulsed Power Transistor 65W, 2.7-2.9 GHz, 100µs Pulse, 10% Duty Features  NPN silicon microwave power transistors  Common base configuration  Broadband Class C operation  High efficiency inter-digitized geometry  Diffused emitter ballasting resistors  Gold metallization system  Internal input and output impedance matching  Hermetic metal/ceramic package  RoHS compliant Outline Drawing Rev. V2 Absolute Maximum Ratings at 25°C Parameter Sym- Rating Units bol Collector-Emitter Voltage Emitter-Base Voltage Collector Current (Peak) VCES VEBO IC 65 3.0 8.
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