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XP1005-BD - Power Amplifier

This page provides the datasheet information for the XP1005-BD, a member of the XP1005-BD-MA Power Amplifier family.

Description

M/A-COM Tech’s four stage 35.0-43.0 GHz GaAs MMIC power amplifier has a small signal gain of 26.0 dB with a +24.0 dBm saturated output power.

The device also includes Lange couplers to achieve good output return loss.

Features

  • Excellent Saturated Output Stage.
  • Balanced Design Provides Good Output Match.
  • 26.0 dB Small Signal Gain.
  • +24.0 dBm Saturated Output Power.
  • 100% On-Wafer RF, DC and Output Power Testing.
  • 100% Commercial-Level Visual Inspection Using Mil-Std-883 Method 2010.
  • RoHS.
  • Compliant and 260°C Reflow Compatible.

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Full PDF Text Transcription

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XP1005-BD Power Amplifier 35.0-43.0 GHz Features  Excellent Saturated Output Stage  Balanced Design Provides Good Output Match  26.0 dB Small Signal Gain  +24.0 dBm Saturated Output Power  100% On-Wafer RF, DC and Output Power Testing  100% Commercial-Level Visual Inspection Using Mil-Std-883 Method 2010  RoHS* Compliant and 260°C Reflow Compatible Description M/A-COM Tech’s four stage 35.0-43.0 GHz GaAs MMIC power amplifier has a small signal gain of 26.0 dB with a +24.0 dBm saturated output power. The device also includes Lange couplers to achieve good output return loss. This MMIC uses M/A-COM Tech’s GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity.
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