A70-3 / SMA70-3
20 to 250 MHz
HIGH OUTPUT POWER: +21 dBm (TYP.)
LOW NOISE: 2.8 dB (TYP.)
HIGH THIRD ORDER I.P.: +40 dBm
LOW DC CURRENT: 37 mA (TYP.) AT +15 Vdc
The A70-3 RF amplifier is a discrete hybrid design, which uses
thin film manufacturing processes for accurate performance and
This single stage bipolar transistor feedback amplifier design
displays impressive performance over a broadband frequency
range. Use of an impedance transformer offers the benefit of
high dynamic range and high efficiency.
Both TO-8 and Surface Mount packages are hermetically
sealed, and MIL-STD-883 environmental screening is available.
** The connectorized version is not RoHs compliant.
Electrical Specifications: Z0 = 50, VCC = +15 VDC
Absolute Maximum Ratings
Small Signal Gain (min)
Gain Flatness (max)
Noise Figure (max)
@ 1 dB comp. (min)
0º to 50ºC -54º to +85ºC*
Storage Temperature -62ºC to +125ºC
Continuous Input Power
Short Term Input power
(1 minute max.)
Peak Power (3 µsec max.)
“S” Series Burn-In
Thermal Data: VCC = +15 VDC
Second Order Harmonic IP dBm
VSWR Input / Output (max)
1.9:1 / 1.9:1 2.1:1 / 2.1:1
DC Current @ 15 Volts (max) mA
2.3:1 / 2.3:1
Thermal Resistance θjc
Transistor Power Dissipation Pd
Junction Temperature Rise
Above Case Tjc
1 * Over temperature performance limits for part number CA70-3, guaranteed from 0oC to +50oC only.
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