A79 Datasheet | MACOM Technology Solutions

Features - HIGH DYNAMIC RANGE: +116 DB/1 MHz - HIGH OUTPUT POWER: +22 d Bm (TYP.) - HIGH THIRD ORDER I.P.: +38 d Bm (TYP.) - LOW NOISE FIGURE: 4.0 d B (TYP.) Description The A79 RF amplifier is a discrete thin film hybrid design, which incorporates the use of thin film manufacturing processes for accurate performance and high reliability. This single stage bipolar transistor feedback amplifier design displays impressive performance over a broadband frequency range. An active DC biasing network is used for temperature-stable performance, in addition to an RF Choke, used for power supply decoupling. Both TO-8 and Surface Mount packages are hermetically sealed, and MIL-STD-883 environmental screening is available. Product Image Ordering Information Part Number A79 SMA79 CA79- - Package TO-8 Surface Mount SMA Connectorized - - The connectorized version is not Ro Hs pliant. Electrical Specifications: Z0 = 50, VCC = +15 VDC Absolute Maximum Ratings Parameter Frequency Small Signal Gain (min) Gain Flatness (max) Reverse Isolation Noise Figure (max) Power Output @ 1 d B p. (min) IP3 Units MHz d B d B d B d B d Bm d Bm Typical 25ºC 2-350 14.0 ±0.3 18 4.0 22.0 +38 Guaranteed 0º to 50ºC -54º to +85ºC- 5-300 5-300 ±0.7 ±1.0 Parameter Absolute Maximum Storage Temperature -62ºC to +125ºC Case Temperature +125ºC...