CG2H40010
Description
The CG2H40010 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).
Key Features
- Up to 8 GHz Operation
- 18 dB Small Signal Gain at 2.0 GHz
- 16 dB Small Signal Gain at 4.0 GHz
- 17 W typical PSAT
- 70% Efficiency at PSAT
- 28 V Operation
Applications
- 2-Way Private Radio
