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CG2H40010 - RF Power GaN HEMT

General Description

The CG2H40010 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).

The CG2H40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications.

Key Features

  • Up to 8 GHz Operation.
  • 18 dB Small Signal Gain at 2.0 GHz.
  • 16 dB Small Signal Gain at 4.0 GHz.
  • 17 W typical PSAT.
  • 70% Efficiency at PSAT.
  • 28 V Operation.

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Full PDF Text Transcription (Reference)

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CG2H40010 10 W, DC - 8 GHz, RF Power GaN HEMT Description The CG2H40010 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CG2H40010 ideal for linear and compressed amplifier circuits. The transistor is available in both screw-down, flange and solderdown, pill packages. Package Types: 440196, & 440166 PNs: CG2H40010P & CG2H40010F Features • Up to 8 GHz Operation • 18 dB Small Signal Gain at 2.0 GHz • 16 dB Small Signal Gain at 4.