Title | GaN HEMT For Use With CG2H40010F |
Description | The CG2H40010 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CG2H40010 ideal for linear and compressed amplifier circuits. The transistor is a... |
Features |
• Up to 8 GHz Operation • 18 dB Small Signal Gain at 2.0 GHz • 16 dB Small Signal Gain at 4.0 GHz • 17 W typical PSAT • 70% Efficiency at PSAT • 28 V Operation Applications • 2-Way Private Radio • Broadband Amplifiers • Cellular Infrastructure • Test Instrumentation • Class A, AB, Linear amplifiers suitable for OFDM, W-CDMA, EDGE, CDMA waveforms ... |
Datasheet |
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Distributor |
![]() DigiKey |
Stock | 4 In stock |
Price |
1 units: 1064637 KRW
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BuyNow |
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Distributor | Stock | Price | BuyNow |
---|---|---|---|
![]() DigiKey |
1 units: 1064637 KRW |
BuyNow |
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![]() Mouser Electronics |
1 units: 92.9 USD 10 units: 84.81 USD 25 units: 80.92 USD 40 units: 79.12 USD |
BuyNow |
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![]() Verical |
1 units: 124.85 USD |
BuyNow |
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![]() Richardson RFPD |
No price available |