CMPA0530002S
Description
The CMPA0530002S is a packaged gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC).
Key Features
- for 28 V in CMPA0530002S-AMP
- 18 dB Small Signal Gain
- 2.9 W Typical PSAT
- Operation up to 28 V
- High Breakdown Voltage
- High Temperature Operation
- Size 0.118 x 0.157 x 0.033 inches
Applications
- Civil and Military munications
