MASW-000834 Datasheet | MACOM Technology Solutions

Features - Exceptional Broadband Performance - Low Loss: TX = 0.33 d B @ 2010 MHz, 5 V / 20 m A TX = 0.38 d B @ 3.5 GHz, 5 V / 20 m A - High Isolation: RX = 44 d B @ 2010 MHz, 20 m A / 5 V RX = 36 d B @ 3.5 GHz, 20 m A / 5 V - High TX RF Input Power: 50 W CW @ 2010 MHz - High TX RF Input Peak Power: >1000 W - Suitable for Very High Power TD-SCDMA & Wi MAX Applications - Surface Mount 4 mm PQFN Package - Ro HS- pliant Applications - Aerospace & Defense - Wireless Networking & munication Description The MASW-000834 is a SPDT broadband, high linearity, mon anode, PIN diode T/R switch, for 0.05 - 6.0 GHz applications, including Wi MAX & Wi Fi. The device is provided in industry standard 4 mm PQFN plastic packaging. This device incorporates a PIN diode die fabricated with MAs’ patented silicon-glass HMICTM process. This chip features two silicon pedestals embedded in a low loss, low dispersion glass. The diodes are formed on the top of each pedestal. The topside is fully encapsulated with silicon nitride and has an additional polymer passivation layer that prevents damage and contamination during handling and assembly. This pact SPDT switch offers wideband performance with excellent isolation to loss ratio for both TX and RX states. The PIN diode provides 50 W typical CW power handling and 65 d Bm IIP3 at 2010 MHz for maximum switch performance. This pact SPDT switch offers wideband performance with excellent isolation to loss ratio for both TX and RX states. The PIN diode provides 45 W CW power handling at an 85°C baseplate temperature and 72 d Bm IIP3 at 2010 MHz for maximum switch performance. Rev. V10 Functional Diagram (Top View) N/C N/C GND 11 TX GND 12 N/C ANT 2 11 N/C GND 3 10 N/C N/C 4 9 DC2 N/C GND RX GND Pin...