MRF10031 Datasheet | MACOM Technology Solutions

Features - Guaranteed performance @ 960-1215MHz, 36Vdc - Output power: 30W peak - Minimum gain: 9.0d B min., 9.5d B typ. - 100% tested for load mismatch at all phase angles with 10:1 VSWR - Hermetically sealed, industry standard package - Silicon nitride passivated - Gold metallized, emitter ballasted for long life and resistance to metal migration - Internal input matching for broadband operation Description and Applications Designed for 960- 1215 MHz long or short pulse mon base amplifier applications such as JTIDS and Mode- S transmitters. Maximum Ratings Product Image Rev. V1 CASE 332A- 03, STYLE 2 M/A- Technology Solutions Inc. (MA) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit .ma. for additional data sheets and product information. For further information and support please visit: https://.ma./support Microwave Power Silicon NPN Transistor 30W (peak), 960- 1215MHz, 36V Rev. V1 Output power versus input power M/A- Technology Solutions Inc. (MA) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit .ma. for additional data sheets and product information. For further information and support please visit: https://.ma./support Microwave Power Silicon NPN Transistor 30W (peak), 960- 1215MHz, 36V Rev. V1 M/A- Technology Solutions Inc. (MA) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit .ma. for additional data sheets and product information. For further information and support please visit: https://.ma./support Microwave Power Silicon NPN Transistor 30W (peak), 960- 1215MHz, 36V Rev. V1 Series equivalent input/output impedances M/A- Technology Solutions Inc. (MA) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit .ma. for...