Datasheet Summary
Thermally-Enhanced High Power RF LDMOS FET 520 W, 48 V, 925
- 960 MHz
Description
The PTRA095908NB is a 520-watt (P3dB) LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 925 to 960 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced plastic overmold package with earless flange.
Package Types: PG-HB2SOF-6-1
Peak/Average Ratio, Gain (dB) Efficiency (%)
Single-carrier WCDMA Drive-up VDD = 48 V, IDQ(MAIN) = 500 mA, VGS(PEAK) = 2.10 V, ƒ = 960 MHz,
3GPP WCDMA signal, 10 dB PAR,
3.84 MHz bandwidth
Efficiency
Gain
8 PAR @ 0.01% CCDF
-20
-40
0 ptra09590nb-gr1a...
