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PTRA095908NB MACOM Thermally-Enhanced High Power RF LDMOS FET

Title RF MOSFET Transistors 520W, Si LDMOS, 48V, 925-960MHz, TO275
Description The PTRA095908NB is a 520-watt (P3dB) LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 925 to 960 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced plastic overmold package with earless flange. Package Types: PG-HB2SOF-6-1 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 48 V,...
Features include input and output matching, high gain and thermally-enhanced plastic overmold package with earless flange. Package Types: PG-HB2SOF-6-1 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ(MAIN) = 500 mA, VGS(PEAK) = 2.10 V, ƒ = 960 MHz, 3GPP WCDMA signal, 10 dB PAR, 3.84 MHz bandwidth 24 60 Effici...

Datasheet PDF File PTRA095908NB Datasheet - 684.13KB
Distributor Distributor
Mouser Electronics
Stock 0 In stock
Price
250 units: 107.5 USD
BuyNow BuyNow No Longer Stocked - Manufacturer a MACOM PTRA095908NB-V1-R2

PTRA095908NB   PTRA095908NB   PTRA095908NB  



PTRA095908NB Distributor

Distributor Stock Price BuyNow
Distributor
Mouser Electronics
0
250 units: 107.5 USD
MACOM

Distributor
Richardson RFPD
0
No price available
MACOM





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