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UF2805B - RF Power MOSFET Transistor

General Description

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Key Features

  • N-channel enhancement mode device.
  • DMOS structure.
  • Lower capacitances for broadband operation.
  • Common source configuration.
  • Lower noise floor.
  • 100 MHz to 500 MHz operation Package Outline Rev. V1.

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UF2805B RF Power MOSFET Transistor 5W, 100-500 MHz, 28V Features  N-channel enhancement mode device  DMOS structure  Lower capacitances for broadband operation  Common source configuration  Lower noise floor  100 MHz to 500 MHz operation Package Outline Rev. V1 ABSOLUTE MAXIMUM RATINGS AT 25° C Parameter Symbol Rating Units Drain-Source Voltage Gate-Source Voltage Drain-Source Current Power Dissipation Junction Temperature Storage Temperature Thermal Resistance VDS VGS IDS PD TJ TSTG θJC 65 20 1.4 14.4 200 -55 to +150 12.1 V V A W °C °C °C/W TYPICAL DEVICE IMPEDANCES F (MHz) ZIN (Ω) ZLOAD (Ω) 100 15.0-j8.0 35.0+j55.0 300 8.0-j43.0 29.0+j40.0 500 4.0-j29.0 28.0-j29.0 VDD=28V, IDQ=50 Ma, POUT=100.