UF2805B
UF2805B is RF Power MOSFET Transistor manufactured by MACOM Technology Solutions.
Features
- N-channel enhancement mode device
- DMOS structure
- Lower capacitances for broadband operation
- mon source configuration
- Lower noise floor
- 100 MHz to 500 MHz operation
Package Outline
Rev. V1
ABSOLUTE MAXIMUM RATINGS AT 25° C
Parameter
Symbol Rating
Units
Drain-Source Voltage Gate-Source Voltage Drain-Source Current Power Dissipation Junction Temperature Storage Temperature Thermal Resistance
VDS VGS IDS PD TJ TSTG θJC
65 20 1.4 14.4 200 -55 to +150 12.1
V V A W °C °C °C/W
TYPICAL DEVICE IMPEDANCES
F (MHz)
ZIN (Ω)
ZLOAD (Ω)
15.0-j8.0
35.0+j55.0
8.0-j43.0
29.0+j40.0
4.0-j29.0
28.0-j29.0
VDD=28V, IDQ=50 Ma, POUT=100.0 W
ZIN is the series equivalent input impedance of the device from gate to source.
ZLOAD is the optimum series equivalent load impedance as measured from drain to drain.
ELECTRICAL CHARACTERISTICS AT 25°C
Parameter
Symbol Min
Drain-Source Breakdown Voltage
BVDSS
Drain-Source Leakage...
