WS1A3940
Overview
The WS1A3940 is an Asymmetric Doherty Power Amplifier Module (PAM) integrating the GaN on SiC HEMT transistors with RF matching and biasing networks on a multilayer laminate substrate with advanced heat sinking technology. The WS1A3940 has been designed to operate from 3700 MHz to 3980 MHz, from supply voltages up to 50 V, at average output power levels of 8 to 10 W with crestfactor reduced and digitally pre-distorted LTE and 5G NR signals with instantaneous bandwidths of 200 MHz or more.
- GaN on SiC technology
- Frequency: 3700-3980 MHz
- Average Output Power: 39.5 dBm
- PSAT = 48 dBm
- RF inputs matched to 50 Ω and DC matched
- Gate bias supply for main and peak sides available from either side of device
- Integrated harmonic terminations
- Pb-free and RoHS compliant
