MCC
R
Micro Commercial Components
Micro Commercial Components
130 W Cochran St, Unit B
Simi Valley, CA 93065
Tel:818-701-4933
2SA1774-Q
2SA1774-R
2SA1774-S
Features
• Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
• Small Package
• Mounting:any position
• Epoxy meets UL 94 V-0 flammability rating
• Moisure Sensitivity Level 1
• Halogen free available upon request by adding suffix "-HF"
Maximum Ratings @ Ta = 25ć(unless otherwise noted)
Symbol
Parameter
Value
IC Collector Current
-0.15
PD Total Device Dissipation
0.15
TJ Junction Temperature
150
TSTG
Storage Temperature Range
-55 to +150
Unit
A
W
к
к
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
Min
OFF CHARACTERISTICS
V(BR)CEO
V(BR)CBO
Collector-Emitter Breakdown Voltage
(IC=-1mAdc,IB=0)
Collector-Base Breakdown Voltage
(IC=-50µAdc,IE=0)
-50
-60
V(BR)EBO
Collector-Base Breakdown Voltage
(IE=-50µAdc,IC=0)
-6.0
ICBO
Collector-Base Cutoff Current
(VCB=-60Vdc, IE=0)
IEBO
Emitter-Base Cutoff Current
(VEB=-6.0Vdc, IC=0)
ON CHARACTERISTICS
HFE
VCE(sat)
FT
DC Current Gain
(IC=-1.0mAdc, VCE=-6.0Vdc)
Collector-Emitter Saturation Voltage
(IC=-50mAdc, IB=-5.0mAdc)
Transition Frequency
(VCE=-12Vdc,IC=-2mAdc,f=30MHZ)
120
140(Typ)
Cob
Collector Output Capacitance
(VCB=-12Vdc,IC=0Adc,f=1MHZ)
hCLASSIFICATION OF FE
Rank
Q
R
Range
120-270
180-390
Marking
FQ
FR
Max Units
V
V
V
-0.1 µAdc
-0.1 µAdc
560
-0.5 Vdc
MHZ
5 PF
S
270-560
FS
PNP Silicon
Epitaxial Transistor
SOT-523
A
D
BC
C
BE
E
G
K
HJ
DIMENSIONS
INCHES
MM
DIM MIN
MAX MIN MAX
A .059 .067 1.50 1.70
B .030 .033 0.75 0.85
C .057 .069 1.45 1.75
D
.020 Nominal
0.50Nominal
E .035 .043 0.90 1.10
G .000
.004 .000
.100
H .028 .031 .70 0.80
J .004 .008 .100 .200
K .010 .014 .25 .35
NOTE
Revision: D
www.mccsemi.com
1 of 3
2019/01/21
