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MCC

2SA1952 Datasheet Preview

2SA1952 Datasheet

PNP Transistor

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2SA1952
Features
• Low Collector Saturation Voltage
• Suitable for Middle Power Driver
• Halogen Free Available Upon Request By Adding Suffix "-HF"
• Moisture Sensitivity Level 1
• Epoxy Meets UL 94 V-0 Flammability Rating
• Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS
Compliant. See Ordering Information)
Maximum Ratings @ 25°C Unless Otherwise Specified
• Operating Junction Temperature Range: -55to +150
• Storage Temperature Range: -55to +150
• Thermal Resistance: 125/W Junction to Ambient
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Symbol
VCBO
VCEO
VEBO
IC
PD
Rating
-100
-60
-5
-5
1
Unit
V
V
V
A
W
Marking: A1952
Internal Structure
2,4
1
3
1.BASE
2,4.COLLECTOR
3.EMITTER
PNP
Plastic-Encapsulate
Transistors
DPAK(TO-252)
J
H
C
1
O
2
4 FE
I
3
M
K
V
G
L
Q
A
B
D
DIMENSIONS
DIM
INCHES
MM
MIN MAX MIN MAX
A 0.087 0.094 2.20 2.40
B 0.000 0.005 0.00 0.13
C 0.026 0.034 0.66 0.86
D 0.018 0.023 0.46 0.58
E 0.256 0.264 6.50 6.70
F 0.201 0.215 5.10 5.46
G
0.190
4.83
H 0.236 0.244 6.00 6.20
I 0.086 0.094 2.18 2.39
J 0.386 0.409 9.80 10.40
K
0.114
2.90
L 0.055 0.067 1.40 1.70
M
0.063
1.60
O 0.043 0.051 1.10 1.30
Q 0.000 0.012 0.00 0.30
V
0.211
5.35
NOTE
TYP.
TYP.
TYP.
TYP.
Rev.3-1-01012019
1/4
MCCSEMI.COM




MCC

2SA1952 Datasheet Preview

2SA1952 Datasheet

PNP Transistor

No Preview Available !

2SA1952
Electrical Characteristics @ TA=25°C Unless Otherwise Specified
Parameter
Symbol Min Typ Max Units
Conditions
Collector-Base Breakdown Voltage
V(BR)CBO -100
V IC=-50µA, IE=0
Collector-Emitter Breakdown Voltage V(BR)CEO -60
V IC=-1mA, IB=0
Emitter-Base Breakdown Voltage
V(BR)EBO
-5
V IE=-50µA, IC=0
Collector Cutoff Current
ICBO
-10
µA VCB=-100V, IE=0
Emitter Cutoff Current
IEBO
-10
µA VEB=-5V, IC=0
DC Current Gain
hFE(1)
hFE(2)
120
40
270
VCE=-2V, IC=-1A
VCE=-2V, IC=-3A
Collector-Emitter Saturation Voltage
VCE(sat)
-0.3
V IC=-3A, IB=-150mA
-0.5
V IC=-4A, IB=-200mA
Base-Emitter Saturation Voltage
VBE(sat)
-1.2
V IC=-3A, IB=-150mA
-1.5
V IC=-4A, IB=-200mA
Transition Frequency
fT
80
MHz VCE=-10V, IC=-500mA, f=30MHz
Collector Output Capacitance
Cob
130
pF VCB=-10V, IE=0,f=1MHz
Turn-on Time
ton
0.3
µs
Storage Time
ts
1.5
µs VCC=-30V, IC=-3A, IB1=IB2=-150mA
Fall Time
tf
0.3
µs
Rev.3-1-01012019
2/4
MCCSEMI.COM



Part Number 2SA1952
Description PNP Transistor
Maker MCC
Total Page 3 Pages
PDF Download

2SA1952 Datasheet PDF





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