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MCC

BZT52C30S Datasheet Preview

BZT52C30S Datasheet

200mW Zener Diode

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MCC
TM
Micro Commercial Components
  omponents
20736 Marilla Street Chatsworth

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BZT52C2V4S
THRU
BZT52C39S
Features
x Planar Die Construction
x 200mW Power Dissipation on Ceramic PCB
x General Purpose Medium Current
x Ideally Suited for Automated Assembly Processes
Epoxy meets UL 94 V-0 flammability rating
Moisture Sensitivity Level 1
Lead Free Finish/RoHS Compliant("P" Suffix
designates RoHS Compliant. See ordering information)
Halogen free available upon request by adding suffix "-HF"
Absolute Maximum Ratings
Symbol
PD
TJ
TSTG
Parameter
Power dissipation
Junction Temperature
Storage Temperature Range
Rating
200
-65 to +150
-65 to +150
Unit
mW
к
к
C
H
200 mW
Zener Diode
2.4 to 39 Volts
SOD-323
A
B
E
D
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
RthJA
Thermal Resistance Junction to
Ambient*
625 к/W
* Device mounted on ceramic PCB: 7.6mm x 9.4mm x 0.87mm with
pad areas 25 mm2
Electrical Characteristics
Symbol
Parameter
Rating
VF
Maximum Forward Voltage
(IF=10mAdc)
0.9
Unit
V
GJ
DIMENSIONS
DIM INCHES
MM NOTE
MIN MAX MIN MAX
A .090 .107 2.30 2.70
B .063 .071 1.60 1.80
C .045 .053 1.15 1.35
D .031 .045 0.80 1.15
E .010 .016 0.25 0.40
G .004 .018 0.10 0.45
H .004 .010 0.10 0.25
J ----- .006 ----- 0.15
SUGGESTED SOLDER
PAD LAYOUT
0.074"
0.027”
0.022”
Revision: B
www.mccsemi.com
1 of 3
2014/01/01




MCC

BZT52C30S Datasheet Preview

BZT52C30S Datasheet

200mW Zener Diode

No Preview Available !

BZT52C2V4S THRU BZT52C39S
ELECTRICAL CHARACTERISTICS @25qC
MCC
TM
Micro Commercial Components
Type
ZENER VOLTAGE
VZ (1)
VOLTS
Maximum Zener
Impedance (2)
ZZT(OHMS)
Maximum Zener
Impedance (2)
ZZK (OHMS)
Min. Nom
Max.
IZT(mA)
Max.
IZK(mA)
Max.
BZT52C2V4S 2.28
2.4
2.56
5
100 1.0
600
BZT52C2V7S 2.5
2.7
2.9
5
100 1.0
600
BZT52C3V0S 2.8
3.0
3.2
5
95
1.0
600
BZT52C3V3S 3.1
3.3
3.5
5
95
1.0
600
BZT52C3V6S 3.4
3.6
3.8
5
90
1.0
600
BZT52C3V9S 3.7
3.9
4.1
5
90
1.0
600
BZT52C4V3S 4.0
4.3
4.6
5
90
1.0
600
BZT52C4V7S 4.4
4.7
5.0
5
80
1.0
500
BZT52C5V1S 4.8
5.1
5.4
5
60
1.0
480
BZT52C5V6S 5.2
5.6
6.0
5
40
1.0
400
BZT52C6V2S 5.8
6.2
6.6
5
10
1.0
150
BZT52C6V8S 6.4
6.8
7.2
5
15
1.0
80
BZT52C7V5S 7.0
7.5
7.9
5
15
1.0
80
BZT52C8V2S 7.7
8.2
8.7
5
15
1.0
80
BZT52C9V1S 8.5
9.1
9.6
5
15
1.0
100
BZT52C10S
9.4
10
10.6
5
20
1.0
150
BZT52C11S 10.4
11
11.6
5
20
1.0
150
BZT52C12S 11.4
12
12.7
5
25
1.0
150
BZT52C13S 12.4
13
14.1
5
30
1.0
170
BZT52C15S 13.8
15
15.6
5
30
1.0
200
BZT52C16S 15.3
16
17.1
5
40
1.0
200
BZT52C18S 16.8
18
19.1
5
45
1.0
225
BZT52C20S 18.8
20
21.2
5
55
1.0
225
BZT52C22S 20.8
22
23.3
5
55
1.0
250
BZT52C24S 22.8
24
25.6
5
70
1.0
250
BZT52C27S 25.1
27
28.9
2
80
0.5
300
BZT52C30S
28
30
32
2
80
0.5
300
BZT52C33S
31
33
35
2
80
0.5
325
BZT52C36S
34
36
38
2
90
0.5
350
BZT52C39S
37
39
41
2 130 0.5
350
(1) Device mounted on ceramic PCB: 7.6mm x 9.4mm x 0.87mm with pad areas 25 mm2
(2) f=1KHz
REVERSE
CURRENT
IR (Max) @ VR
µA V
50 1.0
20 1.0
10 1.0
5 1.0
5 1.0
3 1.0
3 1.0
3 2.0
2 2.0
1 2.0
3 4.0
2 4.0
1 5.0
0.7 5.0
0.5 6.0
0.2 7.0
0.1 8.0
0.1 8.0
0.1 8.0
0.1 10.5
0.1 11.2
0.1 12.6
0.1 14.0
0.1 15.4
0.1 16.8
0.1 18.9
0.1 21.0
0.1 23.1
0.1 25.2
0.1 27.3
Typical
Temperature
Coefficent
@ IZTC
mV/ć
-3.5 0
-3.5 0
-3.5 0
-3.5 0
-3.5 0
-3.5 0
-3.5 0
-3.5 0.2
-2.7 1.2
-2.0 2.5
0.4 3.7
1.2 4.5
2.5 5.3
3.2 6.2
3.8 7.0
4.5 8.0
5.4 9.0
6.0 10.0
7.0 11.0
9.2 13.0
10.4 14.0
12.4 16.0
14.4 18.0
16.4 20.0
18.4 22.0
21.4 25.3
24.4 29.4
27.4 33.4
30.4 37.4
33.4 41.2
Marking
WX
W1
W2
W3
W4
W5
W6
W7
W8
W9
WA
WB
WC
WD
WE
WF
WG
WH
WI
WJ
WK
WL
WM
WN
WO
WP
WQ
WR
WS
WT
Revision: B
www.mccsemi.com
2 of 3
2014/01/01


Part Number BZT52C30S
Description 200mW Zener Diode
Maker MCC
Total Page 4 Pages
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