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MCG30N03 Datasheet Preview

MCG30N03 Datasheet

N-Channel MOSFET

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MCC
R
Micro Commercial Components
  omponents
20736 Marilla Street Chatsworth

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Features
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Halogen free available upon request by adding suffix "-HF"
Epoxy meets UL 94 V-0 flammability rating
Moisture Sensitivity Level 1
Maximum Ratings @ 25OC Unless Otherwise Specified
Symbol
VDS
ID
Parameter
Drain-source Voltage
Drain Current-Continuous
TC = 25°C
TC = 100°C
Rating
30
30
21
IDM
Pulsed Drain Current (Note 1)
60
VGS
Gate-source Voltage
±20
PD
Maximum Power Dissipation
25
RthJC Thermal Resistance,Junction-to-Case(Note 2)
5
E AS
Single pulse avalanche energy (Note 5)
70
TJ
Operating Junction Temperature
TSTG
Storage Temperature
-55 to +150
-55 to +150
Unit
V
A
A
V
W
oC/W
mj
к
к
EQUIVALENT CIRCUIT
Bottom View
D
DD D
S S Pin1
S
G
MCG30N03
N-Channel
Power MOSFET
DFN3030
K
H
M
FD
L
G
J
E
A
C
B
DIM
A
B
C
D
E
F
G
H
J
K
L
M
Dimensions
INCHES
MM
MIN
0.028
MAX
0.035
0.000
0.002
0.004
0.010
0.118 BSC
0.126 BSC
0.093 BSC
0.118 BSC
0.026 BSC
0.069 BSC
0.023BSC
0.012
0.020
0.009
0.014
MIN
MAX
0.70
0.90
0.00
0.05
0.10
0.25
3.00 BSC
3.20 BSC
2.35 BSC
3.00 BSC
0.65 BSC
1.75 BSC
0.575 BSC
0.30
0.50
0.24
0.35
NOTE
Revision: A
www.mccsemi.com
1 of 5
2017/08/19




MCC

MCG30N03 Datasheet Preview

MCG30N03 Datasheet

N-Channel MOSFET

No Preview Available !

MCC
R
Micro Commercial Components
ELECTRICAL CHARACTERISTICS(Ta=25unless otherwise specified)
Parameter
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Symbol
Condition
Min Typ Max Unit
BVDSS
IDSS
IGSS
VGS=0V ID=250μA
VDS=30V,VGS=0V
VGS=±20V,VDS=0V
30
33
-
V
-
-
1
μA
-
-
±100
nA
VGS(th)
RDS(ON)
gFS
VDS=VGS,ID=250μA
VGS=10V, ID=10A
VGS=4.5V, ID=10A
VDS=5V,ID=20A
1
1.5
2.3
V
-
6.3
9
m
-
9.2
13
15
-
-
S
Clss
Coss
VDS=15V,VGS=0V,
F=1.0MHz
- 1490
-
PF
-
220
-
PF
Crss
-
135
-
PF
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
-
10
-
nS
VDD=15V,ID=10A
-
8
-
nS
VGS=10V,RGEN=1.8
-
30
-
nS
-
5
-
nS
VDS=15V,ID=9A,
VGS=10V
-
15
-
nC
-
3
-
nC
-
4.5
-
nC
VSD
VGS=0V,IS=10A
-
0.85
1.2
V
IS
-
-
25
A
trr
TJ = 25°C, IF = 10A
-
22
35
nS
Qrr
di/dt = 100A/μs(Note3)
-
12
20
nC
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
5. EAS conditionTj=25,VDD=15V,VG=10V,L=0.1mH,Rg=25
Revision: A
www.mccsemi.com
2 of 5
2017/08/19


Part Number MCG30N03
Description N-Channel MOSFET
Maker MCC
Total Page 3 Pages
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