Datasheet4U Logo Datasheet4U.com

MCG30N03 - N-Channel MOSFET

Key Features

  • High density cell design for ultra low Rdson.
  • Fully characterized avalanche voltage and current.
  • Halogen free available upon request by adding suffix "-HF".
  • Epoxy meets UL 94 V-0 flammability rating.
  • Moisture Sensitivity Level 1 Maximum Ratings @ 25OC Unless Otherwise Specified Symbol VDS ID Parameter Drain-source Voltage Drain Current-Continuous TC = 25°C TC = 100°C Rating 30 30 21 IDM Pulsed Drain Current (Note 1) 60 VGS Gate-source Volta.

📥 Download Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MCC R Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • High density cell design for ultra low Rdson • Fully characterized avalanche voltage and current • Halogen free available upon request by adding suffix "-HF" • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 Maximum Ratings @ 25OC Unless Otherwise Specified Symbol VDS ID Parameter Drain-source Voltage Drain Current-Continuous TC = 25°C TC = 100°C Rating 30 30 21 IDM Pulsed Drain Current (Note 1) 60 VGS Gate-source Voltage ±20 PD Maximum Power Dissipation 25 RthJC Thermal Resistance,Junction-to-Case(Note 2) 5 E AS Single pulse avalanche energy (Note 5) 70 TJ Operating Junction Temperat