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MCC

MCU18N10 Datasheet Preview

MCU18N10 Datasheet

N-Channel MOSFET

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MCC
R
Micro Commercial Components
Micro Commercial Components
20736 Marilla Street Chatsworth
CA 91311
Phone:(818) 701-4933
Fax: (818) 701-4939
Features
Fast switching
Improved dv/dt capability
Halogen free available upon request by adding suffix "-HF"
Excellent package for good heat dissipation
Epoxy meets UL 94 V-0 flammability rating
Moisture Sensitivity Level 1
Maximum Ratings @ 25OC Unless Otherwise Specified
Symbol
Parameter
VDS
Drain-source Voltage
Rating
100
ID
Drain Current-Continuous Tc=25°C
18
Tc=100°C
12.6
EAS
VGS
IDM
R
©JC
PD
TJ
TSTG
Single Pulsed Avalanche Energy(note2)
Gate-source Voltage
Pulsed Drain Current(note1)
Thermal Resistance Junction to Case
Maximum Power
Dissipation
Tc=25°C
Operating Junction Temperature
Storage Temperature
20
r20
72
3.2
47
-55 to +150
-55 to +150
Unit
V
A
mJ
V
A
к/W
W
к
к
Internal Block Diagram
D
G
S
MCU18N10
N-Channel
Enhancement Mode
Field Effect Transistor
DPAK
J
H
C
1
O
2
4 FE
I
3
M
K
V
G
Q
A
L
B
DIMENSIONS
D 1.GATE
2.DRAIN
3.SOURCE
4.DRAIN
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
0.087
0.094
2.20
2.40
B
0.000
0.005
0.00
0.13
C
0.026
0.034
0.66
0.86
D
0.018
0.023
0.46
0.58
E
0.256
0.264
6.50
6.70
F
0.201
0.215
5.10
5.46
G
0.190
4.83
H
0.236
0.244
6.00
6.20
I
0.086
0.094
2.18
2.39
J
0.386
0.409
9.80
10.40
K
0.114
2.90
L
0.055
0.067
1.40
1.70
M
0.063
1.60
O
0.043
0.051
1.10
1.30
Q
0.000
0.012
0.00
0.30
0.211
5.35
Revision: A
www.mccsemi.com
1 of 5
2017/11/30




MCC

MCU18N10 Datasheet Preview

MCU18N10 Datasheet

N-Channel MOSFET

No Preview Available !

MCC
R
Micro Commercial Components
Electrical Characteristics TC=25unless otherwise specified
Symbol
Parameter
Test Condition
Min. Typ. Max. Units
On / Off States
V(BR)DSS Drain-Source Breakdown Voltage
VGS = 0V,ID = 250µA
100
-
-
V
IDSS
Zero Gate Voltage Drain Current(TC=25°C) VDS = 100V, VGS = 0V
-
-
1
µA
IDSS
Zero Gate Voltage Drain Current(TC=125°C) VDS = 100V, VGS = 0V
-
-
5
µA
IGSS
Gate to Body Leakage Current
VDS = 0V, VGS = ±20V
-
-
±100
nA
VGS(th)
RDS(on)
Gate Threshold Voltage
Drain-Source On-State Resistance
VDS = VGS, ID = 250µA
VGS =10V, ID = 4.5A
1
2
3
V
-
0.035 0.046
Dynamic Characteristics
gFS
Forward Transconductance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain(“Miller”) Charge
VDS =5 V, ID = 4.5A
5
-
-
S
VDS = 50V, VGS = 0V,
f = 1.0MHz
-
1380
-
pF
-
88
-
pF
-
60
-
pF
VDS = 50V, ID = 4.5A,
VGS = 10V
-
26.8
-
nC
-
6.4
-
nC
-
12.4
-
nC
Switching Characteristics
td(on)
Turn-On Delay Time
-
7
-
ns
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
VDS=50V,RL=8.6
VGS=10V,RG=3
-
12
-
ns
-
24
-
ns
tf
Turn-Off Fall Time
-
11
-
ns
Source-Drain Diode Characteristics
ISD
Source-Drain Current(Body Diode)
-
18
-
A
ISDM
Pulsed Source-Drain Current(Body Diode)
-
72
-
A
VSD
Forward On Voltage (note 3)
TJ=25,ISD=1A,VGS=0V
-
0.75
1
V
trr
Reverse Recovery Time(note 3)
TJ=25,IF=4.5A
Qrr
Reverse Recovery Charge (note3)
di/dt=500A/µs
-
22
-
ns
-
28
-
nC
ton
Forward Turn-on Time
Intrinsic turn-on time is negligible(turn-on is dominated by LS+LD)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. EAS Condition: TJ = 25, VDD = 50V, VG = 10V, RG = 25
3. Pulse Test:: Pulse width 300µs; duty cycle 1.5%.Starting TJ=25
Revision: A
www.mccsemi.com
2 of 5
2017/11/30


Part Number MCU18N10
Description N-Channel MOSFET
Maker MCC
Total Page 3 Pages
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