900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






MCC

SI4153 Datasheet Preview

SI4153 Datasheet

N-Channel MOSFET

No Preview Available !

MCC
TM
Micro Commercial Components
  omponents
20736 Marilla Street Chatsworth

  !"#
$ %    !"#
Features
Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
Low RDS(on) Improving System Efficiency
ESD Protected Gate
Epoxy meets UL 94 V-0 flammability rating
Moisture Sensitivity Level 1
Halogen free available upon request by adding suffix "-HF"
SI4153
N-Channel
Plastic-Encapsulate
Transistor
Mechanical Data
Case: SOT-523, Molded Plastic
Terminal Connections: See Diagram
Maximum Ratings
Operating Temperature: -55°C to +150°C
Storage Temperature: -55°C to +150°C
Parameter
Symbol Value Unit
SOT-523
A
D
3
1
2
E
BC
1.GATE
2.SOURCE
3.DRAIN
Drain-Source-Voltage
Gate-Source-Voltage
Continuous Drain Current
Thermal Resistance,
Junction-to-Ambient
Total Power Dissipation
Equivalent circuit
VDSS
VGSS
ID
R thJA
PD
20
V
±6
V
0.915
833
A
oC/W
150
mW
G
H
J
K
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
A
.059
.067
1.50
1.70
B
.030
.033
0.75
0.85
C
.057
.069
1.45
1.75
D
.020 Nominal
0.50Nominal
E
.035
.043
0.90
1.10
G
.000
.004
.000
.100
H
.028
.031
.70
0.80
J
.004
.008
.100
.200
K
.010
.014
.25
.35
NOTE
SUGGESTED SOLDER
PAD LAYOUT
(mm)
Marking: X / 34K
Revision: C
www.mccsemi.com
1 of 4
2018/05/05




MCC

SI4153 Datasheet Preview

SI4153 Datasheet

N-Channel MOSFET

No Preview Available !

SI4153
MCC
TM
Micro Commercial Components
MOSFET ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise specified)
Parameter
Symbol
Test Condition
OFF CHARACTERISTICS
Drain-source breakdown voltage
Gate-source leakage
Zero gate voltage drain current
V(BR)DSS
IGSS
IDSS
VGS = 0V, ID =250µA
VDS =0V, VGS =±4.5V
VDS =16V, VGS =0V
ON CHARACTERISTICS (note 2)
Gate-source threshold voltage
Drain-source on-state resistance
Forward transconductance
VGS(th)
RDS(on)
gfs
VDS =VGS, ID =250µA
VGS =4.5V, ID =600mA
VGS =2.5V, ID =500mA
VGS =1.8V, ID =350mA
VGS =1.5V, ID =40mA
VDS =10V, ID =400mA
CHARGES AND CAPACITANCES (note 3)
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
VDS =16V,VGS =0V,f =1MHz
VDS =10V,VGS =4.5V,
ID =200mA
SWITCHING CHARACTERISTICS (note 3,4)
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
VDD=10V, VGS=4.5V
RG=10, ID =200mA
DRAIN-SOURCE DIODE CHARACTERISTICS
Body diode voltage
VSD
IS=0.2A, VGS =0V
Notes :
1. Surface m nted on FR4 board using 1 in sq pad size.
2. Puls Test : Pulse width 300µs, Duty cycle 2%.
3. Guaranteed by design, not subject to production testing.
4. witching characteristics are independent of operating junction temperatures.
Min Typ
20
0.45
0.5
110
16
12
1.82
0.3
0.42
3.7
4.4
25
7.6
Max
±1
100
1.1
570
620
700
950
1.1
Unit
V
µA
nA
V
m
S
pF
nC
ns
V
Revision: C
www.mccsemi.com
2 of 4
2018/05/05


Part Number SI4153
Description N-Channel MOSFET
Maker MCC
Total Page 3 Pages
PDF Download

SI4153 Datasheet PDF

View PDF for Mobile






Similar Datasheet

1 SI4153 N-Channel MOSFET
MCC
2 SI4154DY N-Channel MOSFET
Vishay Siliconix
3 SI4156DY N-Channel MOSFET
Vishay Siliconix





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy