SIL2308
Electrical Characteristics @ 25°C (Unless Otherwise Specified)
N-Channel
Parameter
Symbol
Test Condition
Static Characteristics
Drain-source breakdown voltage
V(BR)DSS VGS = 0V, ID =250µA
Zero gate voltage drain current
IDSS
VDS =20V,VGS = 0V
Gate-body leakage current
IGSS
VGS =±12V, VDS = 0V
Gate threshold voltage
VGS(th) VDS =VGS, ID =250µA
Drain-source on-resistance(Note 1)
RDS(on)
VGS =4.5V, ID =4.5A
VGS =2.5V, ID =3.5A
Forward transconductance
gFS
VDS =5V, ID =7A
Diode forward voltage
VSD
IS=1.7A,VGS=0V
Dynamic characteristics(Note 2)
Total gate charge
Qg
Gate-source charge
Qgs
VDS =10V,VGS =4.5V,ID =4A
Gate-drain charge
Qgd
Input Capacitance
Ciss
Output Capacitance
Coss VDS=8V,VGS=0V,f=1MHz
Reverse Transfer Capacitance
Crss
Switching Characteristics(Note 2)
Turn-on delay time
td(on)
Turn-on rise time
Turn-off delay time
tr
td(off)
VDD=10V , VGS=4V , ID=1A
RG=10Ω
Turn-off fall time
tf
Notes : 1. Pulse Test : Pulse width≤300μs, duty cycle≤0.5%.
2. Guaranteed by design, not subject to production testing.
Min Typ Max Unit
20
V
1
µA
±0.1 µA
0.5 0.7
1
V
38
mΩ
45
9
S
0.7 1.3
V
11
2.3
nC
2.5
800
155
pF
125
18
5
ns
43
20
Rev.3-2-01012019
2/6
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