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MDE Semiconductor

P6KE510CA Datasheet Preview

P6KE510CA Datasheet

600 Watt TVS

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MDE Semiconductor, Inc.
78-150 Calle Tampico, Unit 210, La Quinta, CA., USA 92253 Tel : 760-564-8656 • Fax : 760-564-2414
1-800-831-4881 Email: sales@mdesemiconductor.com Web: www.mdesemiconductor.com
P6KE SERIES
GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR
VOLTAGE - 6.8 TO 550 Volts
600 Watt Peak Power 5.0 Watt Steady State
FEATURES
• Plastic package has Underwriters Laboratory
Flammability Classification 94 V-O
• Glass passivated chip junction in DO-15
(DO-204AC) package
• 600W surge capability at 10/1000 µs
• Low zenen impedance
• Excellent clamping capability
• Fast response time: typically less than
1.0 ps from 0 volts to BV min.
• Typical IR less than 1µA above 10V
• High temperature soldering guaranteed:
265°C/10 seconds/ .375", (9.5mm) lead
length, 5lbs., (2.3kg) tension
MECHANICAL DATA
Case: JEDEC DO-15 Molded plastic
Terminals: Plated Axial leads, solderable per
MIL-STD-750, Method 2026
Polarity: Color band denoted positive end (cathode)
except Bipolar
Mounting Position: Any
Weight: 0.015 ounces, 0.4 grams
DEVICES FOR BIPOLAR APPLICATIONS
For Bidirectional use C or CA Suffix for types P6KE6.80 thru types P6KE550 (e.g. P6KE6.8C, P6KE550CA)
Electrical characteristics apply in both directions.
MAXIMUM RATINGS AND CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
RATING
SYMBOL
Peak Pulse Power Dissipation at TA = 25 °C, TP = 1ms
(NOTE 1)
PPPM
Peak Pulse Current of on 10/1000 µs waveform (Note 1)
IPPM
Steady State Power Dissipation at TL = 75°C
Lead lengths .375", 9.5mm (Note 2)
PM(AV)
Peak Forward Surge Current, 8.3ms Single Half Sine-wave
Superimposed on Rated Load, (JEDEC Method)(Note 3)
IFSM
VALUE
Minimum 600
SEE TABLE 1
1.0
100
Operatings and Storage Temperature Range
TJ, TSTG
-55 +175
NOTES:
1. Non-repetitive current pulse, per Fig.3 and derated above Ta=25 °C per Fig.2.
2. Mounted on Copper Pad area of 1.6x1.6" (40x40mm) per Fig.5.
3. 8.3ms single half sine-wave, or equivalent square wave, Duty cycle=4 pulses per minutes maximum.
UNITS
Watts
Amps
Watts
Amps
°C
Certified RoHS Compliant
UL File # E223026
11/13/2013




MDE Semiconductor

P6KE510CA Datasheet Preview

P6KE510CA Datasheet

600 Watt TVS

No Preview Available !

MDE Semiconductor, Inc.
78-150 Calle Tampico, Unit 210, La Quinta, CA., USA 92253 Tel : 760-564-8656 • Fax : 760-564-2414
1-800-831-4881 Email: sales@mdesemiconductor.com Web: www.mdesemiconductor.com
RATING AND CHARACTERISTIC CURVES P6KE SERIES
Pig.1 - Peak Pulse Power Rating Curve
Non-repetitive Pulse
100 Waveform shown in Fig.
3
10
Fig.2 - Pulse Derating Curve
1
0.1
0.1μs
1.0μs
10μs
100μs
1.0ms
td - Pulse Width (sec.)
10ms
150
100
Fig.3 - Pulse Waveform
tr = 10μsec.
Peak Value
IPPM
Half Value- IPPM
TJ = 25°C
Pulse Width(td)is defined
as the point where the
peak current decays to
50% of IPPM
0
0 0.2 0.4 0.6 0.8 1
TA - Ambient Temperature
10000 Fig.4 - Typ.Junction Capacitance Uni-
6000
TJ = 25°C
f = 1.0MHZ
Vsig = 50mVp-p
Measured at
Zero Bias
1000
1.2
50
td
00
1.0
10/1000μsec.Waveform
as defined by R.E.A.
t - Ti2m.0e(3m.0s)
3 0 4.0
4.0
Fig.5 - steady State Power Derating Curve
L=0.375" (9.5mm)
Lead Lengths
60 HZ Resistive or
Inductive Load
0.63
00.00
0
1.6x1.6x.040"
(40x40x1mm)
Copper Heat Sinks
TL - Lead Temperature (°C)
Fig.7 - Typical Reverse Leakage Characteristics
1000
100
Measured at Devices
Stand-off Voltage,VWM
10 TA = 25°C
1
0.1
0.01
0.001
0
0.2 0.4 0.6 0.8
V(BR) - Breakdown Voltage (V)
1
1.2
100
Measured at
Stand-Off
Voltage, VWM
10 1000
1.0 10 100 200
VWM - Reverse Stand-Off Voltage (V)
Fig.6 - Max.Non-Repetitive Forward Surge
200
Uni-Directional Only
100
TJ = TJ max.
8.3ms Single Half Sine-
Wave
50
10
1 10
5 50
Number of Cycles at 60
Fig. 8 - Typ.Transient Thermal Impedance
100
100
10
1
0.1
0
0.2 0.4 0.6 0.8
1
tp-Pulse Duration (sec)
1.2
11/13/2013


Part Number P6KE510CA
Description 600 Watt TVS
Maker MDE Semiconductor
Total Page 3 Pages
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