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D1D60C16 - GLASS PASSIVATED RECTIFIER DIODE MODULES

Download the D1D60C16 datasheet PDF. This datasheet also covers the D1D60C18 variant, as both devices belong to the same glass passivated rectifier diode modules family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Blocking voltage:800 to 1800V Heat transfer through aluminum oxide DBC ceramic isolated metal baseplate Glass passivated chip Circuit D1D60C18 D1D60A18 D1D60K18 1 1 1 2 2 2 3 3 3 Module Type TYPE D1D60C08 D1D60C12 D1D60C16 D1D60C18 D1D60A08 D1D60A12 D1D60A16 D1D60A18 D1D60K08 D1D60K12 D1D60K16 D1D60K18 VRRM 800V 1200V 1600V 1800V VRSM 900V 1300V 1700V 1900V Maximum Ratings Symbol Conditions Single phase ,half wave 180°conduction Tc=100℃ IFAV Single phase ,half wave 180°c.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (D1D60C18-MIC.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number D1D60C16
Manufacturer MIC
File Size 349.61 KB
Description GLASS PASSIVATED RECTIFIER DIODE MODULES
Datasheet download datasheet D1D60C16 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
GLASS PASSIVATED RECTIFIER DIODE MODULES D1D6C18 VOLTAGE RANGE CURRENT 800 to 1800V 6 Ampere IFAV Applications   60 Amp  Non-controllable rectifiers for AC/AC converters Line rectifiers for transistorized AC motor controllers Field supply for DC motors Features    Blocking voltage:800 to 1800V Heat transfer through aluminum oxide DBC ceramic isolated metal baseplate Glass passivated chip Circuit D1D60C18 D1D60A18 D1D60K18 1 1 1 2 2 2 3 3 3 Module Type TYPE D1D60C08 D1D60C12 D1D60C16 D1D60C18 D1D60A08 D1D60A12 D1D60A16 D1D60A18 D1D60K08 D1D60K12 D1D60K16 D1D60K18 VRRM 800V 1200V 1600V 1800V VRSM 900V 1300V 1700V 1900V Maximum Ratings Symbol Conditions Single phase ,half wave 180°conduction Tc=100℃ IFAV Single phase ,half wave 180°conduction Tc=98℃ IF(RMS) t=10mS Tvj =