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MICRON

PC28F256M29EW Datasheet Preview

PC28F256M29EW Datasheet

Parallel NOR Flash Embedded Memory

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256Mb, 512Mb, 1Gb, 2Gb: 3V Embedded Parallel NOR Flash
Features
Parallel NOR Flash Embedded Memory
JS28F256M29EWxx, PC28F256M29EWxx, RC28F256M29EWxx
JS28F512M29EWxx, PC28F512M29EWxx, RC28F512M29EWxx
JS28F00AM29EWxx, PC28F00AM29EWxx, RC28F00AM29EWxx
PC28F00BM29EWxx, RC28F00BM29EWxx
Features
• 2Gb = stacked device (two 1Gb die)
• Supply voltage
– VCC = 2.7–3.6V (program, erase, read)
– VCCQ = 1.65–VCC (I/O buffers)
• Asynchronous random/page read
– Page size: 16 words or 32 bytes
– Page access: 25ns
– Random access: 100ns (Fortified BGA);
110ns (TSOP)
• Buffer program: 512-word program buffer
• Program time
– 0.88µs per byte (1.14 MB/s) TYP when using full
512-word buffer size in buffer program
• Memory organization
– Uniform blocks: 128-Kbytes or 64-Kwords each
• Program/erase controller
– Embedded byte (x8)/word (x16) program algo-
rithms
• Program/erase suspend and resume capability
– Read from another block during a PROGRAM
SUSPEND operation
– Read or program another block during an ERASE
SUSPEND operation
• BLANK CHECK operation to verify an erased block
• Unlock bypass, block erase, chip erase, and write to
buffer capability
– Fast buffered/batch programming
– Fast block/chip erase
• VPP/WP# pin protection
– Protects first or last block regardless of block
protection settings
• Software protection
– Volatile protection
– Nonvolatile protection
– Password protection
– Password access
• Extended memory block
– 128-word (256-byte) block for permanent, secure
identification
– Programmed or locked at the factory or by the
customer
• Low power consumption: Standby mode
• JESD47-compliant
– 100,000 minimum ERASE cycles per block
– Data retention: 20 years (TYP)
• 65nm multilevel cell (MLC) process technology
• Package
– 56-pin TSOP, 14 x 20mm
– 64-ball fortified BGA, 13 x 11mm
• Green packages available
– RoHS-compliant
– Halogen-free
• Operating temperature
– Ambient: –40°C to +85°C
PDF: 09005aef849b4b09
m29ew_256mb_2gb.pdf - Rev. E 11/16 EN
1 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2012 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.




MICRON

PC28F256M29EW Datasheet Preview

PC28F256M29EW Datasheet

Parallel NOR Flash Embedded Memory

No Preview Available !

256Mb, 512Mb, 1Gb, 2Gb: 3V Embedded Parallel NOR Flash
Features
Part Numbering Information
Devices are shipped from the factory with memory content bits erased to 1. For available options, such as pack-
ages or high/low protection, or for further information, contact your Micron sales representative. Part numbers
can be verified at www.micron.com. Feature and specification comparison by device type is available at www.mi-
cron.com/products. Contact the factory for devices not found.
Table 1: Part Number Information
Part Number
Category
Package
Product designator
Density
Device type
Device function
Features
Category Details
JS = 56-pin TSOP, 14mm x 20mm, lead-free, halogen-free, RoHS-compliant
PC = 64-ball Fortified BGA, 11mm x 13mm, lead-free, halogen-free, RoHS-compliant
RC = 64-ball Fortified BGA, 11mm x 13mm, leaded
28F = NOR parallel interface
256 = 256Mb
512 = 512Mb
00A = 1Gb
00B = 2Gb
M29EW = Embedded Flash memory (3V core, page, uniform block)
H = Highest block protected by VPP/WP#
L = Lowest block protected by VPP/WP#
A/B/D/E or an asterisk (*) = Combination of features, including packing media, special
features, and specific customer request information
Note: 1. For 2Gb device, H also indicates protection of the lowest block by VPP/WP#.
Notes
1
Table 2: Standard Part Numbers by Density, Medium, and Package
Density
256Mb
Medium
Tray
Tape and Reel
512Mb
Tray
Tape and Reel
1Gb Tray
Tape and Reel
2Gb Tray
JS
JS28F256M29EWHA
JS28F256M29EWLA
JS28F256M29EWHB
JS28F256M29EWLB
JS28F512M29EWHA
JS28F512M29EWLA
JS28F512M29EWHB
JS28F512M29EWLB
JS28F00AM29EWHA
JS28F00AM29EWLA
JS28F00AM29EWHB
Package
PC
PC28F256M29EWHA
PC28F256M29EWLA
PC28F256M29EWHB
PC28F256M29EWLB
PC28F512M29EWHD
PC28F512M29EWLA
PC28F512M29EWHB
PC28F512M29EWLB
PC28F00AM29EWHA
PC28F00AM29EWLA
PC28F00AM29EWHB
PC28F00BM29EWHA
RC
RC28F256M29EWHA
RC28F256M29EWLA
RC28F256M29EWHB
RC28F512M29EWHA
RC28F512M29EWLA
RC28F512M29EWHB
RC28F00AM29EWHA
RC28F00AM29EWLA
RC28F00AM29EWHB
RC28F00BM29EWHA
PDF: 09005aef849b4b09
m29ew_256mb_2gb.pdf - Rev. E 11/16 EN
2 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2012 Micron Technology, Inc. All rights reserved.


Part Number PC28F256M29EW
Description Parallel NOR Flash Embedded Memory
Maker MICRON
Total Page 30 Pages
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