GC9914 Datasheet | Microsemi

.Data Sheet.co.kr GC9901 - GC9944 TM ® Schottky Barrier Diodes For Mixers and Detectors Ro HS pliant DESCRIPTION Schottky Barrier devices are currently available in single beamlead, dual “T”, ring quad and bridge quad configurations. Devices are available in monolithic form for hybrid applications as well as in hermetic or non-hermetic packages. Monolithic devices are remended for highest frequency, broadband designs. The beamlead design eliminates the problems associated with wire bonding very small junction devices thus improving reliability and performance in MIC applications. Our in house epitaxy process capability insures repeatability for lowest conversion loss through Ku Band. A broad range of unique metallization schemes produce Microsemi’s plete line of barrier heights. Diodes are currently available with barrier heights as low as 240 m V and up to 625 m V per junction. By optimizing epitaxy and metallization, these devices achieve the lowest RS-CJ products resulting in exceptional conversion loss performance. “High Rel” screening is available on packaged devices per your requirements. This series of devices meets Ro HS requirements per EU Directive 2002/95/EC. KEY Features - Monolithic design for lowest parasitics - Low Conversion Loss - Suitable for applications to 26.5 GHz - Excellent Noise Figure - Available in low, medium and high barrier heights - Can be supplied as monolithic devices for hybrid applications or as packaged devices - Ro HS pliant .MICROSEMI. APPLICATIONS Schottky barrier diodes are suitable for a variety of circuit applications ranging from single ended RF mixers to low level high speed switching. The monolithic beamlead design minimizes parasitic inductance and capacitance insuring repeatable performance through Ku band. Single junction devices such as the style ‘S12’ are well suited for RF Mixers, level detectors, phase detectors, modulators, etc. With junction capacitances as low as .06 p F, Monolithic Quads...