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  Microsemi Electronic Components Datasheet  

GC9941 Datasheet

(GC9901 - GC9944) Schottky Barrier Diodes

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GC9941 pdf
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TM
®
DESCRIPTION
Schottky Barrier devices are currently available in single beamlead, dual “T”,
ring quad and bridge quad configurations. Devices are available in monolithic
form for hybrid applications as well as in hermetic or non-hermetic packages.
Monolithic devices are recommended for highest frequency, broadband
designs. The beamlead design eliminates the problems associated with wire
bonding very small junction devices thus improving reliability and
performance in MIC applications. Our in house epitaxy process capability
insures repeatability for lowest conversion loss through Ku Band. A broad
range of unique metallization schemes produce Microsemi’s complete line of
barrier heights. Diodes are currently available with barrier heights as low as
240 mV and up to 625 mV per junction. By optimizing epitaxy and
metallization, these devices achieve the lowest RS-CJ products resulting in
exceptional conversion loss performance. “High Rel” screening is available on
packaged devices per your requirements.
This series of devices meets RoHS requirements per EU Directive
2002/95/EC.
APPLICATIONS
Schottky barrier diodes are suitable for a variety of circuit applications ranging
from single ended RF mixers to low level high speed switching. The
monolithic beamlead design minimizes parasitic inductance and capacitance
insuring repeatable performance through Ku band. Single junction devices
such as the style ‘S12’ are well suited for RF Mixers, level detectors, phase
detectors, modulators, etc. With junction capacitances as low as .06 pF,
Monolithic Quads are ideally suited for broadband double balanced mixer
designs through 26.5 GHz. The Ultra-Low Barrier devices (GC9900 Series)
are designed for mixers with low or starved Local Oscillator levels where
optimal conversion loss is a must. High barrier diodes, (GC9940 Series) are
designed for applications where high drive levels are available, such as,
Doppler mixers or motion detection. Schottky diodes are available in Ultra-
Low, Medium and High Drive levels to fit virtually any circuit requirement.
ABSOLUTE MAXIMUM RATINGS AT 25º C
(UNLESS OTHERWISE SPECIFIED)
3B
Rating
Symbol
Value
Maximum Power Handling
P
100
Storage Temperature
TSTG
-65 to +175
Operating Temperature
TOP -55 to +150
Unit
mW
ºC
ºC
IMPORTANT:
For the most current data, consult our web site: www.microsemi.com
HU U
Specifications are subject to change. Consult factory for latest information.
These devices are ESD sensitive and must be handled use using ESD precautions.
GC9901 – GC9944
Schottky Barrier Diodes
For Mixers and Detectors
RoHS Compliant
KEY FEATURES
Monolithic design for lowest
parasitics
Low Conversion Loss
Suitable for applications to 26.5
GHz
Excellent Noise Figure
Available in low, medium and high
barrier heights
Can be supplied as monolithic
devices for hybrid applications or
as packaged devices
RoHS Compliant1
1 These devices are supplied with Gold
plated terminations. Consult factory for
details.
APPLICATIONS/BENEFITS
Mixers
Level Detectors
Phase Detectors
Copyright 2006
Rev: 2009-01-19
Microsemi
Microwave Products
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
Page 1
Datasheet pdf - http://www.DataSheet4U.net/


  Microsemi Electronic Components Datasheet  

GC9941 Datasheet

(GC9901 - GC9944) Schottky Barrier Diodes

No Preview Available !

GC9941 pdf
www.DataSheet.co.kr
TM
GC9901 – GC9944
Schottky Barrier Diodes
® For Mixers and Detectors
RoHS Compliant
.
Model1
Number
CHIP ELECTRICAL PARAMETERS @ 25C (unless otherwise specified)
Barrier
Height
Freq
Range
VB(V) 2
IR=10μA
(Min)
CJ(pF)3
@0V
(Max)
VF(mV)
@1 mA
(Max)
RD()
@5 mA
(Max)
N(dFbS)S4B
(Typ)
ZIF()5
(Typ)
GC9901
Ku-Ka
0.10
340
20 6.5
GC9902
GC9903
ULTRA
LOW
X
C
2.0 0.15 310
0.30
300
16 6 140
14 5.5
GC9904
S
0.50
280
12 5.5
GC9911
Ku-Ka
0.10
360
20 6.5
GC9912
GC9913
LOW
X
C
2.0
0.15
0.30
350
340
16
14
6
5.5
170
GC9914
S
0.50
330
12 5.5
GC9921
Ku-Ka
0.10
470
20 6.5
GC9922
GC9923
LOW-
MED
X
C
2.0
0.15
0.30
460
440
16
14
6
5.5
200
GC9924
S
0.50
420
12 5.5
GC9931
Ku-Ka
0.10
550
20 6.75
GC9932
GC9933
MEDIUM
X
C
3.0
0.15
0.30
540
530
16
14
6.25
5.75
250
GC9934
S
0.50
510
12 5.5
GC9941
Ku-Ka
0.10
660
20
7
GC9942
GC9943
HIGH
X
C
4.0
0.15
0.30
640
630
16
14
6.25
5.75
300
GC9944
S
0.50
610
12 5.75
Notes
1. When ordering, specify appropriate package style.
IE: Order GC9901-S12 for single beamlead configuration.
2. V b measured at 10µA (N/A on ring quads).
3. 0 Volts, F=1 MHz (diagonal leads on quads).
4. L.O. = 0 dBm, Nif = 1.5 dB, F = 10 GHz
5. L.O. = 0 dBm
Copyright 2006
Rev: 2009-01-19
Microsemi
Microwave Products
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
Page 2
Datasheet pdf - http://www.DataSheet4U.net/


Part Number GC9941
Description (GC9901 - GC9944) Schottky Barrier Diodes
Maker MICROSEMI
Total Page 6 Pages
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