MORESEMI MSC0211GE
Dual N-Channel MOSFET
| Part No. | MSC0211GE |
|---|---|
| Datasheet | MSC0211GE Download |
| Manufacturer | MORESEMI |
| Description | Dual N-Channel MOSFET |
| Buy | Stock & Price |
GENERAL FEATURES
● VDS = 20V,ID =11A RDS(ON) < 7mΩ @ VGS=2.5V RDS(ON) < 9mΩ @ VGS=4.5V ESD Rating: 2000V HBM● High power and current handing capability
● Lead free product is acquired
● Surface mount package
● ESD protected Lead Free Application
● PWM application
● Load switch PIN Configuration Marking and pin assignment TSSOP-8 top view Schematic diagram Package Marking and Ordering Information Device Marking Device Device Package MSC0211GE MSC0211GE TSSOP-8 Reel Size Ø330mm Tape width 12mm Quantity 3000 units
ABSOLUTE MAXIMUM RATINGS
(TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous Drain Current-Pulsed (Note 1) ID IDM Maximum Power Dissipation PD Operating Junction and Storage Temperature Range TJ,TSTG Limit 20 ±10 11 44 1.6 -55 To 150 Unit V V A A W ℃ Thermal Characteristic Thermal Resistan
