MORESEMI MSN0212W
N-Channel MOSFET
| Part No. | MSN0212W |
|---|---|
| Datasheet | MSN0212W Download |
| Manufacturer | MORESEMI |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
GENERAL FEATURES
●VDS =20V,ID =12A RDS(ON) < 8mΩ @ VGS=10V RDS(ON) < 11mΩ @ VGS=10V● High density cell design for ultra low Rdson
● Fully characterized Avalanche voltage and current Application
● DC/DC Converter
● Notebook Vcore Lead Free PIN Configuration Marking and pin Assignment SOP-8 top view Schematic diagram Package Marking and Ordering Information Device Marking Device Device Package MSN0212W MSN0212W SOP-8 Reel Size Ø330mm Tape width 12mm Quantity 2500 units
ABSOLUTE MAXIMUM RATINGS
(TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous Drain Current-Continuous(TA=100℃) ID ID (100℃) Pulsed Drain Current Maximum Power Dissipation Operating Junction and Storage Temperature Range IDM PD TJ,TSTG Limit 30 ±20 12 8 40 2.5 -55 To 150 Unit V V A A A W ℃ Thermal Characteristic Thermal Resistance,Junction-to
